Abstract:The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs.

Tunneling Anisotropic Magnetoresistance In Fully Epitaxial Magnetic Tunnel Junctions With Different Barriers

Double-barrier Magnetic Tunnel Junctions with Enhanced Tunnel Magnetoresistance

Symmetry-driven large tunneling magnetoresistance in magnetic tunnel junctions with perpendicular magnetic anisotropy

Tunneling anisotropic magnetoresistance of helimagnet tunnel junctions

Tunneling Anisotropic Thermopower and Seebeck Effects in Magnetic Tunnel Junctions

Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Tunable Anisotropic Magnetoelectric Effect in Helimagnetic Tunnel Junctions with Interface Rashba Spin-Orbit Interaction

Magnetization Reversal Mechanism of Magnetic Tunnel Junctions

Annealing of Cofeb/Mgo Based Single and Double Barrier Magnetic Tunnel Junctions: Tunnel Magnetoresistance, Bias Dependence, and Output Voltage

The Tunneling Magnetoresistance Current Dependence on Cross Sectional Area, Angle and Temperature

Insensitivity Of Tunneling Anisotropic Magnetoresistance To Non-Magnetic Electrodes

Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB

Tunneling magnetoresistance in MgO tunnel junctions with Fe-based leads in empirically corrected density functional theory

Design Guidelines of Magnetic Tunnel Junctions with Two-dimensional Tunneling Barrier Layer: Atomistic Simulation Study from Material to Device

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

Improvement of Tunneling Magnetoresistance Induced by Antiferromagnetic Spin Orientation

631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/MgO/CoFe(001) junctions

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable Tunneling Anisotropic Magnetoresistance in Few-layer CrPS4