Tunneling Anisotropic Thermopower and Seebeck Effects in Magnetic Tunnel Junctions

Carlos López-Monís,Alex Matos-Abiague,Jaroslav Fabian

DOI: https://doi.org/10.1103/PhysRevB.90.174426

2013-09-13

Abstract:The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal metal. We develop a theoretical model for describing the dependence of a thermally induced tunneling current across the MTJ on the in-plane orientation of the magnetization in the ferromagnetic layer. The model accounts for the specific Bychkov-Rashba and Dresselhaus spin-orbit interactions present in these systems, which are responsible for the $C_{2v}$ symmetry we find in the TAMT and the TASS.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to study the tunneling anisotropic magnetothermoelectric effect (TAMT) and the tunneling anisotropic spin Seebeck effect (TASS) in magnetic tunnel junctions (MTJ). Specifically, the paper focuses on how these effects depend on the change of in - plane magnetization direction within the ferromagnetic layer in a three - layer magnetic tunnel junction composed of ferromagnetic electrodes, zinc - blende semiconductors and normal metals.

#### Main research contents:
1. **Development of theoretical model**: The author has developed a theoretical model to describe the dependence of the thermally - induced tunneling current through MTJ on the change of in - plane magnetization direction within the ferromagnetic layer. This model takes into account the Bychkov - Rashba and Dresselhaus spin - orbit interactions (SOI) existing in the system, which lead to the C2v symmetry observed in TAMT and TASS.

2. **Explanation of physical phenomena**: The paper explains why the (effective) thermoelectric potential and the (effective) spin Seebeck coefficient exhibit similar anisotropy when the magnetization direction within the rotating ferromagnetic electrode is changed. This anisotropy is due to the combined action of the Bychkov - Rashba and Dresselhaus spin - orbit fields, which have characteristic C2v symmetry.

3. **Possibility of experimental verification**: Based on the existing experimental data and theoretical calculations, the paper predicts the existence of TAMT, TAMT [+], TASS [−] and TASS effects in Fe/GaAs/Au MTJ, and points out that these effects may be measured in similar experiments. In addition, the paper also hopes that this work can encourage further observation of the anisotropic thermal spin injection phenomenon at the ferromagnetic - silicon interface.

#### Formula summary:
- **Definitions of TAMT and TAMT [+]**:
\[
\text{TAMT}(\phi)=\frac{S(0)-S(\phi)}{S(\phi)}, \quad \text{TAMT}[+](\phi)=\frac{S_+(0)-S_+(\phi)}{S_+(\phi)}
\]
where \( S(\phi) \) is the thermoelectric potential, \( S_+(\phi) \) is the effective thermoelectric potential, and \( \phi \) is the angle between the magnetization vector and the reference crystal axis.

- **Definitions of TASS [−] and TASS**:
\[
\text{TASS}[-](\phi)=\frac{S_-(0)-S_-(\phi)}{S_-(\phi)}, \quad \text{TASS}(\phi)=\frac{S_s(0)-S_s(\phi)}{S_s(\phi)}
\]
where \( S_-(\phi) \) is the spin Seebeck coefficient, and \( S_s(\phi) \) is the effective spin Seebeck coefficient.

Through these studies, the paper reveals the important role of spin - orbit coupling in magnetic tunnel junctions and provides theoretical guidance for future experiments.