Abstract:The two-dimensional electron gas (2DEG) generated at the LaAlO3/SrTiO3 interface has been in the focus of oxides research since its first discovery. Although oxygen vacancies play an important role in the generation of the insulator-to-metal transition of the SrTiO3 bare surface, their contribution at the LaAlO3/SrTiO3 interface remains unclear. In this work, we investigated a LaAlO3/SrTiO3 heterostructure with regional distribution of defect-based localized polar sites at the interface. Using static and time-resolved threshold photoemission electron microscopy, we prove that oxygen vacancies are induced near those polar sites, resulting in the increase of carrier density of the 2DEG states. In addition, oxygen-related surface states were uncovered, which we attributed to the release of lattice oxygen during the formation of oxygen vacancies. Such effects are mainly found spatially located around the defect sites at the buried interface, while other regions remain unaffected. Our results confirm that the itinerant electrons induced by oxygen vacancies can coexist with the charge transfer mechanism in the LaAlO3/SrTiO3 heterostructure, together leading to the formation of the metallic interface. These observations provide fundamental insights into the nature of LaAlO3/SrTiO3 interface based 2DEG and unique perspectives for potential applications.

Role Of Step Edges In Oxygen Vacancy Transport Into Srtio3(001)

In-Diffusion of Oxygen Vacancies Near Step Edges Dominates the Oxidation of Perovskite Films

Movement of Oxygen Vacancies in Oxide Film During Annealing Observed by an Optical Reflectivity Difference Technique

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Surface Segregation Of Bulk Oxygen On Oxidation Of Epitaxially Grown Nb-Doped Srtio3 On Srtio3(001)

Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface

Thermally Stimulated Relaxation and Behaviors of Oxygen Vacancies in SrTiO3 Single Crystals with (100), (110) and (111) Orientations

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Oxygen Vacancy Migration along Dislocations in SrTiO3 Studied by Cathodoluminescence

Effect of Vacancies on Oxygen Precipitation in Germanium-Doped Czochralski Silicon

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Localized versus itinerant states created by multiple oxygen vacancies in SrTiO3

Investigation of the Growth Mechanism of SrRuO3thin Films Fabricated by Pulsed Laser Deposition

Ab initio study of the two-dimensional metallic state at the surface of SrTiO3: importance of oxygen vacancies

Positron Annihilation Studies on the Behaviour of Vacancies in Laalo3/Srtio3 Heterostructures

Atomic-resolution study of oxygen vacancy ordering in $La_{0.5}$$Sr_{0.5}$Co$O_{3-δ}$ thin films on SrTi$O_{3}$ during in-situ cooling experiments

Oxygen vacancies in strained SrTiO$_{3}$ thin films: formation enthalpy and manipulation

Δ-Doping of Oxygen Vacancies Dictated by Thermodynamics in Epitaxial SrTiO3 Films

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3