Surface Segregation Of Bulk Oxygen On Oxidation Of Epitaxially Grown Nb-Doped Srtio3 On Srtio3(001)

Fan Chen,Tong Zhao,Yiyan Fei,Huibin Lü,Zhenghao Chen,Guozhen Yang,Xiangdong Zhu
DOI: https://doi.org/10.1063/1.1473694
IF: 4
2002-01-01
Applied Physics Letters
Abstract:We studied the epitaxy of 10 mol % Nb:SrTiO3 on a SrTiO3(100) substrate under an interrupted pulsed-laser-deposition condition. By monitoring the recovery behaviors of reflection high-energy electron diffraction intensity and an optical reflectance difference signal from the growth surface, we observed that, at temperatures above 630 degreesC, the oxidation of an as-deposited Nb:SrTiO3 monolayer was achieved by the diffusion of oxygen vacancies in the monolayer into the substrate. (C) 2002 American Institute of Physics.
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