Abstract:Enabling light-controlled ionic devices requires insight into photoionic responses in technologically relevant materials. Mixed-conducting perovskites containing nondilute Fe─serving as electrodes, catalysts, and sensors─can support large, electronically accommodated excursions in oxygen content, typically controlled by temperature, bias, and gas atmosphere. Instead, we investigated the ability of low-fluence, above-bandgap illumination to adjust oxygen stoichiometry and drive oxygen fluxes in nondilute Sr(Ti1-xFex)O3-x/2+δ (x = 0.07, 0.35) thin films with high baseline hole concentrations. Films' optical transmission at 2.8 eV was used as a probe of oxygen stoichiometry in the range ∼100-500 °C. We compared pO2-step-driven and UV (3.4 eV)-step-driven visible optical transmission relaxations in films, finding that the time constants and activation energies of the relaxations were consistent with each other and thus with oxygen-surface-exchange-limited kinetics. Blocking oxygen exchange at the solid-gas interface with a UV-transparent capping layer resulted in no UV-induced optical relaxations. These results demonstrate that above-bandgap illumination can increase oxygen content in nondilute compositions through oxygen flux into the solid from the gas. First-principles simulations of defect formation enthalpies indicate that oxygen vacancies are energetically less favorable under steady-state illumination owing to shifts in quasi-Fermi levels. A larger 2.8 eV-optical response to UV illumination in x = 0.07 vs x = 0.35 samples was further investigated through ultrafast transient spectroscopy, where it was found that the x = 0.07 sample exhibits a slower carrier recombination. Together, these results suggest potential design principles for materials supporting large stoichiometry changes under above-gap illumination: (1) long excited carrier lifetimes and (2) highly charged, rather than neutral, defects/associates.

In-Diffusion of Oxygen Vacancies Near Step Edges Dominates the Oxidation of Perovskite Films

Role Of Step Edges In Oxygen Vacancy Transport Into Srtio3(001)

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Movement of Oxygen Vacancies in Oxide Film During Annealing Observed by an Optical Reflectivity Difference Technique

Surface Segregation Of Bulk Oxygen On Oxidation Of Epitaxially Grown Nb-Doped Srtio3 On Srtio3(001)

Δ-Doping of Oxygen Vacancies Dictated by Thermodynamics in Epitaxial SrTiO3 Films

Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study

Surface and interface effects in oxygen deficient SrMnO$_3$ thin films grown on SrTiO$_3$

Oscillations in Oblique-Incidence Optical Reflection from a Growth Surface During Layer-by-layer Epitaxy

Oxygen vacancies in SrTiO$_{3}$ thin films at finite temperatures: A first-principles study

Deterministic influence of substrate-induced oxygen vacancy diffusion on $Bi_{2}WO_{6}$ thin film growth

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

UV radiation enhanced oxygen vacancy formation caused by the PLD plasma plume

UV-Driven Oxygen Surface Exchange and Stoichiometry Changes in a Thin-Film, Nondilute Mixed Ionic Electronic Conductor, Sr(Ti,Fe)O3-d

Interface and Surface Cation Stoichiometry Modified by Oxygen Vacancies in Epitaxial Manganite Films

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3

Oxygen vacancies in strained SrTiO$_{3}$ thin films: formation enthalpy and manipulation

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Unidirectional Charge Orders Induced by Oxygen Vacancies on SrTiO_3(001)

The Structure of Oxygen Vacancies in the Near-Surface of Reduced CeO2 (111) Under Strain