Abstract:The effect of dislocations on the chemical, electrical and transport properties in oxide materials is important for electrochemical devices, such as fuel cells and resistive switches, but these effects have remained largely unexplored at the atomic level. In this work, by using large-scale atomistic simulations, we uncover how a < 100 >{011} edge dislocation in SrTiO3, a prototypical perovskite oxide, impacts the local defect chemistry and oxide ion transport. We find that, in the dilute limit, oxygen vacancy formation energy in SrTiO3 is lower at sites close to the dislocation core, by as much as 2 eV compared to that in the bulk. We show that the formation of a space-charge zone based on the redistribution of charged oxygen vacancies can be captured quantitatively at atomistic level by mapping the vacancy formation energies around the dislocation. Oxide-ion diffusion was studied for a low vacancy concentration regime (ppm level) and a high vacancy concentration regime (up to 2.5%). In both cases, no evidence of pipe-diffusion, i.e., significantly enhanced mobility of oxide ions, was found as determined from the calculated migration barriers, contrary to the case in metals. However, in the low vacancy concentration regime, the vacancy accumulation at the dislocation core gives rise to a higher diffusion coefficient, even though the oxide-ion mobility itself is lower than that in the bulk. Our findings have important implications for applications of perovskite oxides for information and energy technologies. The observed lower oxygen vacancy formation energy at the dislocation core provides a quantitative and direct explanation for the electronic conductivity of dislocations in SrTiO3 and related oxides studied for red-ox based resistive switching. Reducibility and electronic transport at dislocations can also be quantitatively engineered into active materials for fuel cells, catalysis, and electronics.

Oxygen Vacancy Migration along Dislocations in SrTiO3 Studied by Cathodoluminescence

Dislocation-related Surface-Layer Effect in SrTiO3 Single Crystals

Assessment of Strain-Generated Oxygen Vacancies Using SrTiO₃ Bicrystals

Thermally Stimulated Relaxation and Behaviors of Oxygen Vacancies in SrTiO3 Single Crystals with (100), (110) and (111) Orientations

Dislocations In Srtio3: Easy To Reduce But Not So Fast For Oxygen Transport

Atomic Origin of Ti Deficient Dislocation in SrTiO3 Bicrystal and Their Electronic Structures

Atomic Origin of Ti-deficient Dislocation in SrTiO3 Bicrystals and Their Electronic Structures

Oxygen vacancy diffusion in bulk SrTiO3 from density functional theory calculations

Localized versus itinerant states created by multiple oxygen vacancies in SrTiO3

Oxygen vacancies in strained SrTiO$_{3}$ thin films: formation enthalpy and manipulation

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Enhanced Photoconductivity at Dislocations in SrTiO3

Influence of Oxygen Vacancy on the Electronic Structure of Cacu3ti4o12 and Its Deep-Level Vacancy Trap States by First-Principle Calculation

Oxygen Vacancy Linear Clustering in a Perovskite Oxide

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Oxygen Vacancy Motion in Perovskite Oxides

Atomic scale characterization of oxygen vacancy segregation at SrTiO3 grain boundaries

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3

Role Of Step Edges In Oxygen Vacancy Transport Into Srtio3(001)

Oxygen vacancies in SrTiO$_{3}$ thin films at finite temperatures: A first-principles study