Magnetotransport Properties in La1−xCaxMnO3 (x=0.33, 0.5) Thin Films Deposited on Different Substrates
YM Xiong,GY Wang,XG Luo,CH Wang,XH Chen,X Chen,CL Chen
DOI: https://doi.org/10.1063/1.1870118
IF: 2.877
2005-01-01
Journal of Applied Physics
Abstract:Magnetotransport properties of La1−xCaxMnO3 (x=0.33, 0.5) thin films on different substrates are systematically studied. Due to the different lattice-substrate mismatch between films and substrates, compressive, and tensile epitaxial strain can be induced, respectively. The structure distortion induced by the strain with different sign influences the transport property and magnetoresistance. The tensile strain induces an increase of resistivity and magnetoresistance, while the resistivity peak temperature decreases. Compressive strain leads to a contrary behavior. The microstructure of films is also dominated by the lattice-substrate mismatch strongly. The inhomogeneities and different mixed domain structure induce the broadening of magnetic transition in films on SrTiO3 and NdGaO3, and a sharp increase in magnetoresistance in La0.67Ca0.33MnO3 films with increasing field. In addition, the low temperature metal–insulator transition in the resistivity of La0.5Ca0.5MnO3 film on LaAlO3 also indicates the sample inhomogeneities. The suppression of the charge-ordering state in La0.5Ca0.5MnO3 films is mainly dominated by the magnetic field, whereas the effect of the lattice-substrate mismatch is weak. It is due to the origin of the charge-ordering state. When the charge-ordering state is completely suppressed, the effect of lattice-substrate mismatch on charge transport and magnetoresistance shows up obviously.