Crystalline Orientation Effects on the Electronic Transport Properties of LaMnOy Thin Films

JH Zhang,NB Ming,XG Li
DOI: https://doi.org/10.1063/1.1402665
IF: 2.877
2001-01-01
Journal of Applied Physics
Abstract:We have grown epitaxial and polycrystalline LaMnOy thin films on a LaAlO3 substrate by the off-axis magnetron sputtering technique and investigated the crystalline orientation effects on the electronic transport properties. Lattice mismatch, crystalline quality, resistivity, resistivity transition temperature T-p, and magnetoresistance (MR) in epitaxial films exhibit crystalline orientation dependence. The largest T-p and MR are observed in the (111) oriented films. In the polycrystalline films, the T-p is smaller than that of the (011)/(111) oriented films but higher than that of the (001) oriented films. The MR increases with decreasing temperature in contrast to that of the epitaxial films in which the MR experiences a peak near T-p. Oxygen annealing decreases MR and resistivity, and increases T-p in the order: (111)< (011)< (001)< (polycrystalline). The above results suggest that the structure and composition of the epitaxial films improve in the order: (001)< (011)< (111). (C) 2001 American Institute of Physics.
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