Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

High-Spatial-Resolution Strain Measurements by Auger Electron Spectroscopy in Epitaxial-Lateral-Overgrowth Gan

Strain Effects On Auger Electron Spectroscopy In Different Regions Of Epitaxial-Lateral-Overgrowth Gan

Spatially Resolved and Orientation Dependent Raman Mapping of Epitaxial Lateral Overgrowth Nonpolar A-Plane GaN on R-Plane Sapphire.

Structural Properties of Laterally Overgrown Gan

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

A Partly-Contacted Epitaxial Lateral Overgrowth Method Applied to GaN Material

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Strain in Gan Epi-Layer Grown by Hydride Vapor Phase Epitaxy

Epitaxial Lateral Overgrowth Of Gan By Hvpe And Movpe

Optical Properties Evolution of GaN Film Grown Via Lateral Epitaxial Overgrowth

Study of Epitaxial Lateral Overgrowth GaN by MOCVD

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

Epitaxial Lateral Overgrowth Of Gan On Si Substrates By Hydride Vapor Phase Epitaxy

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices

Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering

Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

Strain and Microstructures of Gan Epilayers with Thick Ingan Interlayer Grown by Mocvd