Anisotropic Properties of Bi-2201 Thin Films Grown on Vicinal Substrates

YZ Zhang,Z Wang,DN Zheng,HH Wen,ZX Zhao

DOI: https://doi.org/10.1142/s0217984905008554

2005-01-01

Modern Physics Letters B

Abstract:La doped Bi -2201 thin films were deposited on SrTiO 3 vicinal substrates with their (100) planes ~6° misoriented. The angular-dependent resistivity was studied in magnetic fields up to 23.5 T.

What problem does this paper attempt to address?

ANISOTROPIC PROPERTIES OF Bi-2201 THIN FILMS GROWN ON VICINAL SUBSTRATES

Y. Z. ZHANG,Z. WANG,D. N. ZHENG,H. H. WEN,Z. X. ZHAO,J. F. DE MARNEFFE,R. DELTOUR,A. G. M. JANSEN,P. WYDER

DOI: https://doi.org/10.1142/s0217984905008554

2005-01-01

Modern Physics Letters B

Abstract:La doped Bi -2201 thin films were deposited on SrTiO 3 vicinal substrates with their (100) planes ~6° misoriented. The angular-dependent resistivity was studied in magnetic fields up to 23.5 T.
Growth and Anisotropic Transport Properties of Off-Axis MgB2 Thin Films

Hong-Zhang Wang,Yu-Long Li,Yue Wang,Zi-Zhao Gan

DOI: https://doi.org/10.1016/j.physc.2019.1353587

2020-01-01

Abstract:Off-axis MgB2 thin films with c-axis tilted away from the film normal have been fabricated on MgO (211) substrate via a hybrid physical-chemical vapor deposition method. Microscopy images show that the film surface is characterized by terrace steps, which, in line with the x-ray diffraction experiment, demonstrates the tilted growth of the film. To probe the resistivity anisotropy resulted from this tilted growth, resistance measurements in Van der Pauw configuration have been performed. By refining an equivalent-circuit model proposed previously to simulate the measurement, the anisotropy ratio rho(T)/rho(L) is estimated, where rho(T) or rho(L) is the resistivity transverse or parallel to the terrace steps respectively. The validity of the estimation has been checked by direct measurements of rho(T) and rho(L) in standard linear-four probe configuration, which are performed by patterning microbridges from the film along or across the terrace steps. The patterned microbridges also enable us to measure the anisotropy of the superconducting critical current density J(c), which shows that J(c,L) parallel to the terrace steps is higher than J(c,T) transverse to the terrace steps and the anisotropy ratio J(c,L)/J(c,T) decreases as temperature increases, following a simple [1 + (T/T-c)(2)](-1/2) dependence with T the superconducting transition temperature. The results are discussed under the framework of multiband transport of MgB2 which exhibits anisotropy between the crystallographic c-axis and ab-plane because of the anisotropic contribution of the sigma bands.
Anisotropic Dielectric Properties in Epitaxial Bi3.25la0.75ti3o12 Thin Films along Different Crystal Directions

JS Lee,BS Kang,Y Lin,Y Li,QX Jia

DOI: https://doi.org/10.1063/1.1797536

IF: 4

2004-01-01

Applied Physics Letters

Abstract:Epitaxial (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown by pulsed-laser deposition on (001) LaAlO3 single-crystal substrates. The dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants are 358 and 160 along [100] and [11¯0], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0–200kV∕cm are observed for a film along [001] where c-axis oriented SrRuO3 is used as the bottom electrode.
An integrated approach to doped thin films with strain tunable magnetic anisotropy: Powder synthesis, target preparation and pulsed laser deposition of Bi:YIG

Pathikumar Sellappan,Chi Tang,Jing Shi,Javier E. Garay

DOI: https://doi.org/10.1080/21663831.2016.1195779

2016-07-15

Abstract:We present a synthesis/processing method for fabricating ferrimagnetic insulator (Bi-doped yttrium iron garnet) thin films with tunable magnetic anisotropy. Since the desired magnetic properties rely on controllable thickness and successful doping, we pay attention to the entire synthesis/processing procedure (nanopowder synthesis, nanocrystalline target preparation and pulsed laser deposition (PLD)). Atomically flat films were deposited by PLD on (111)-orientated yttrium aluminum garnet. We show a significant enhancement of perpendicular anisotropy in the films, caused by strain-induced anisotropy. In addition, the perpendicular anisotropy is tunable by decreasing the film thickness and overwhelms the shape anisotropy at a critical thickness of 3.5 nm.

Materials Science
Electrical Characteristics Of (001)- And Random-Oriented Bi3.15nd0.85ti3o12 Thin Films: A Comparative Study

C. Zhao,R. Q. Zhu,D. Wu,A. D. Li

DOI: https://doi.org/10.1088/0022-3727/41/4/045309

2008-01-01

Abstract:Highly (0 0 1)-oriented Bi3.15Nd0.85Ti3O12 (BNdT) films were deposited directly on single-crystalline Nb-doped SrTiO3 (STON) conductive substrates by chemical solution deposition. The electrical characteristics of BNdT films were studied and compared with random-oriented BNdT films on Pt/TiO2/SiO2/Si substrates. BNdT films on STON substrates show much smaller remanent polarization and epsilon(r) values. This indicates that dominant polarization of BNdT is not along the (0 0 1)-axis. However, (0 0 1)-oriented BNdT films exhibit better retention characteristics, which can be ascribed to the better film/electrode interface between BNdT and STON.
Electrical characteristics of (0 0 1)- and random-oriented Bi3.15Nd0.85Ti3O12 thin films: a comparative study

Chao Zhao,R Q Zhu,Di Wu,Aidong Li

DOI: https://doi.org/10.1088/0022-3727/41/4/045309

2008-01-01

Abstract:Highly (0 0 1)-oriented Bi3.15Nd0.85Ti3O12 (BNdT) films were deposited directly on single-crystalline Nb-doped SrTiO3 (STON) conductive substrates by chemical solution deposition. The electrical characteristics of BNdT films were studied and compared with random-oriented BNdT films on Pt/TiO2/SiO2/Si substrates. BNdT films on STON substrates show much smaller remanent polarization and r values. This indicates that dominant polarization of BNdT is not along the (0 0 1)-axis. However, (0 0 1)-oriented BNdT films exhibit better retention characteristics, which can be ascribed to the better film/electrode interface between BNdT and STON.
Influence of the Vicinal Surface on the Anisotropic Dielectric Properties of Highly Epitaxial Ba0.7Sr0.3TiO3thin Films

Guang Yao,Yanda Ji,Weizheng Liang,Min Gao,Shengliang Zheng,You Wang,Handong Li,Zhiming Wang,Chonglin Chen,Yuan Lin

DOI: https://doi.org/10.1039/c6nr09044c

IF: 6.7

2017-01-01

Nanoscale

Abstract:Epitaxial thin films of Ba0.7Sr0.3TiO3 (BST) were grown on the designed vicinal single-crystal LaAlO3 (001) substrates to systematically investigate the evolution of microstructures and in-plane dielectric properties of the as-grown films under the strains induced by surface step terraces. Anisotropic dielectric properties were observed, which can be attributed to different tetragonalities induced by vicinal LaAlO3 substrates with miscut orientations along the [100] and [110] directions with different miscut angles of 1.0°, 2.75° and 5.0°. A terrace geometric model with both compressive and tensile strained domains in the BST film was established, which is in good agreement with the experimental results. Our experimental studies not only shed new light on the heteroepitaxial growth mechanism, but also provide a promising platform for the design and integration of high performance device applications.
Electrical characteristics of (0 0 1)- and random-oriented Bi3.15Nd0.85Ti3O12 thin films: a comparative study

C Zhao,R Q Zhu,D Wu,A D Li

DOI: https://doi.org/10.1088/0022-3727/41/4/045309

2008-01-01

Abstract:Highly (0 0 1)-oriented Bi3.15Nd0.85Ti3O12 (BNdT) films were deposited directly on single-crystalline Nb-doped SrTiO3 (STON) conductive substrates by chemical solution deposition. The electrical characteristics of BNdT films were studied and compared with random-oriented BNdT films on Pt/TiO2/SiO2/Si substrates. BNdT films on STON substrates show much smaller remanent polarization and epsilon(r) values. This indicates that dominant polarization of BNdT is not along the (0 0 1)-axis. However, (0 0 1)-oriented BNdT films exhibit better retention characteristics, which can be ascribed to the better film/electrode interface between BNdT and STON.
Anisotropic Properties of Single Crystal Bi2Sr2CaCu2O8+δ

SQ FENG,H ZHANG,X ZHU,B ZHANG,QR FENG,J ZHANG,ZH GAN

DOI: https://doi.org/10.1016/0921-4534(89)90866-6

1989-01-01

Abstract:The temperature dependence of the resistivity tensor of single crystal Bi2Sr2CaCu2O8 + d has been measured from 80K to 290K. The a-b plane anisotropy ρa/ρb is about 2 at near Tc, the perpendicular component ρc is 103 times greater than ρa or ρb at near Tc, showing a highly two-dimensional character of the electron structure in BiSrCaCuO. The curing temperature has strong effect on the temperature dependence of ρc. It seems that the intrinsic temperature behavior of both ρc and ρa or ρb is metallic. Large resistance drop at around of both ρc indicating the possibility of making (2223) single crystals in BiSrCaCuO. Data of the Hall effect is also given.
Anisotropic Resistivities of Single-Crystalbi2sr2cacu

Xianhui Chen,Miao Yu,Kaidong Ruan,S. Y. Li,Gui Zhang,Guangqian Zhang,Liang Cao

DOI: https://doi.org/10.1103/physrevb.58.14219

1998-01-01

Abstract:The in-plane resistivity ${\ensuremath{\rho}}_{\mathrm{ab}}(T)$ and the out-of-plane ${\ensuremath{\rho}}_{c}(T)$ have been extensively measured for the pure single-crystal ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{CaCu}}_{2}{\mathrm{O}}_{8+\mathrm{\ensuremath{\delta}}\mathrm{}}\mathrm{}(\mathrm{Bi}2212)$ annealed at different oxygen pressure. The ${\ensuremath{\rho}}_{c}(T)$ and anisotropy $[{\ensuremath{\rho}}_{c}(T)/{\ensuremath{\rho}}_{\mathrm{ab}}(T)]$ decreases rapidly with increasing carrier concentration. It is found that the out-of-plane resistivity decreases linearly with temperature down to about 120 K for the overdoped sample; its resistivity anisotropy is a weak temperature dependence. In the $\mathrm{ab}$ plane, the anisotropy is very weak and nearly independent of temperature. The data of ${\ensuremath{\rho}}_{c}(T)$ and ${\ensuremath{\rho}}_{c}(T)/{\ensuremath{\rho}}_{\mathrm{ab}}(T)$ are well fitted by the bipolaron theory proposed by Alexandrov and Mott.
Effect of Anisotropic Strain on the Charge Ordering Transition in Manganite Films

Y. Z. Chen,J. R. Sun,S. Liang,W. M. Lv,B. G. Shen,W. B. Wu

DOI: https://doi.org/10.1063/1.2908222

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:The substrate induced anisotropic strain was found to have a significant effect on the charge ordering (CO) transition and surface morphology in Bi0.4Ca0.6MnO3 films deposited on (110)- and (111)-oriented SrTiO3 substrates. Effects of film thickness t on the CO transition were further studied. The CO transition appears at TCO when t exceeds 50nm, and develops rapidly to an excellent state as t reaches 100nm. The distinctive thickness-dependent CO transition has a close relation with the anisotropic strain relaxation process.
Structural and Ferroelectric Properties of La Modified Sr0.8bi2.2ta2o9 Thin Films

Haifeng Shi,Caixia Yang,Yinyin Lin,Ting-Ao Tang

DOI: https://doi.org/10.1016/j.materresbull.2005.04.024

IF: 5.6

2005-01-01

Materials Research Bulletin

Abstract:La modified SBT (Sr0.8La0.1Bi2.1Ta2O9) thin films of different thickness were fabricated on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition technique. All the films were annealed layer-by-layer at 800°C using a rapid thermal annealing furnace. X-ray diffraction analysis indicated that the relative intensity of the (200) diffraction peak [I(200)/I(115)] increased with the increase of the film thickness. Eventually, an a-axis preferentially oriented SLBT film was obtained. These results are discussed with respect to the anisotropy of the grain growth. The a-axis preferentially oriented SLBT film, whose relative intensity of the (200) peak [I(200)/I(115)] was 1.05, had a remanent polarization (2Pr) value of 21μC/cm2 and a coercive field (2Ec) value of 70kV/cm under the electric field of 200kV/cm.
Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7- δ Thin Films

Gernot Heine,Wolfgang Lang,Roman Rössler,Johannes D Pedarnig

DOI: https://doi.org/10.3390/nano11030675

2021-03-09

Abstract:The resistivity and the Hall effect in the copper-oxide high-temperature superconductor YBa2Cu3O7-δ (YBCO) are remarkably anisotropic. Using a thin film of YBCO grown on an off-axis cut SrTiO3 substrate allows one to investigate these anisotropic transport properties in a planar and well-defined sample geometry employing a homogeneous current density. In the normal state, the Hall voltage probed parallel to the copper-oxide layers is positive and strongly temperature dependent, whereas the out-of-plane Hall voltage is negative and almost temperature independent. The results confirm previous measurements on single crystals by an entirely different measurement method and demonstrate that vicinal thin films might be also useful for investigations of other layered nanomaterials.
Thickness Effect On (La0.26bi0.74)(2)Ti4o11 Thin-Film Composition And Electrical Properties

Hui-Zhen Guo,An-Quan Jiang

DOI: https://doi.org/10.1088/0256-307X/35/2/026801

2018-01-01

Chinese Physics Letters

Abstract:Highly oriented (001) (La0.26Bi0.74)(2)Ti4O11 thin films are deposited on (100) SrTiO3 substrates using the pulsed laser deposition technique. The grains form a texture of bar-like arrays along SrTiO3 < 110 > directions for the film thickness above 350 nm, in contrast to spherical grains for the reduced film thickness below 220 nm. Xray diffraction patterns show that the highly ordered bar-like grains are the ensemble of two lattice-matched monoclinic (La, Bi)(4)Ti3O12 and TiO2 components above a critical film thickness. Otherwise, the phase decomposes into the random mixture of Bi2Ti2O7 and Bi4Ti3O4 spherical grains in thinner films. The critical thickness can increase up to 440nm as the films are deposited on LaNiO3-buffered SrTiO3 substrates. The electrical measurements show the dielectric enhancement of the multi-components, and comprehensive charge injection into interfacial traps between (La, Bi)(4)Ti3O12 and TiO2 components occurs under the application of a threshold voltage for the realization of high-charge storage.
Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films

Cristina V Manzano,Begoña Abad,Miguel Muñoz Rojo,Yee Rui Koh,Stephen L Hodson,Antonio M Lopez Martinez,Xianfan Xu,Ali Shakouri,Timothy D Sands,Theodorian Borca-Tasciuc,Marisol Martin-Gonzalez

DOI: https://doi.org/10.1038/srep19129

2016-01-18

Abstract:Highly oriented [1 1 0] Bi2Te3 films were obtained by pulsed electrodeposition. The structure, composition, and morphology of these films were characterized. The thermoelectric figure of merit (zT), both parallel and perpendicular to the substrate surface, were determined by measuring the Seebeck coefficient, electrical conductivity, and thermal conductivity in each direction. At 300 K, the in-plane and out-of-plane figure of merits of these Bi2Te3 films were (5.6 ± 1.2)·10(-2) and (10.4 ± 2.6)·10(-2), respectively.
Colossal Anisotropic Resistivity and Oriented Magnetic Domains in Strained La0.325pr0.3ca0.375mno3 Films

Tao Jiang,Shengwei Yang,Haibiao Zhou,Yukuai Liu,Wenbo Zhao,Lei Feng,Yubin Hou,Qingyou Lu,Xiaoguang Li

DOI: https://doi.org/10.1063/1.4878557

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Magnetic and resistive anisotropies have been studied for the La0.325Pr0.3Ca0.375MnO3 films with different thicknesses grown on low symmetric (011)-oriented (LaAlO3)(0.3)(SrAl0.5Ta0.5O3)(0.7) substrates. In the magnetic and electronic phase separation region, a colossal anisotropic resistivity (AR) of similar to 10(5) % and an anomalous large anisotropic magnetoresistance can be observed for 30 nm film. However, for 120 nm film, the maximum AR decreases significantly (similar to 2 x 10(3) %) due to strain relaxation. The colossal AR is strongly associated with the oriented formation of magnetic domains, and the features of the strain effects are believed to be useful for the design of artificial materials and devices. (C) 2014 AIP Publishing LLC.
Effect of Anisotropic Strain on the Charge Ordering Behavior in Bi0.4ca0.6mno3 Films

Y. H. Ding,Y. Q. Wang,R. S. Cai,Y. Z. Chen,J. R. Sun

DOI: https://doi.org/10.1063/1.3660722

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Anisotropic strain has a significant influence on the charge ordering (CO) behavior in Bi0.4Ca0.6MnO3 (BCMO) films on (110) SrTiO3 substrates. Effect of film thickness on the CO behavior in BCMO films was investigated at 103 K using transmission electron microscopy. It was found that the film has undergone a structural transformation with the increase of film thickness, i.e., from no modulation to a localized incommensurate modulation and further to a commensurate modulation. The distinctive thickness-dependent CO transition has a close relationship with the anisotropic strain relaxation process. Structural models are proposed to explain the modulated structures in the films.
Anisotropy Of Crystal Growth Mechanisms, Dielectricity, And Magnetism Of Multiferroic Bi2femno6 Thin Films

P. Liu,Z. X. Cheng,Y. Du,L. Y. Feng,H. Fang,X. L. Wang,S. X. Dou

DOI: https://doi.org/10.1063/1.4794724

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:Epitaxial Bi2FeMnO6 (BFMO) thin films deposited on various Nb:SrTiO3 substrates show that the lattice parameters are very sensitive to epitaxial strains. Compressive and tensile strains are induced to the in-plane lattice constants of the (100) and (111) oriented films, respectively, while that of the (110) oriented thin film stay unstrained. The thin films also exhibit a strongly anisotropic growth habit depending on the substrate. Spiral growth, such as in the (100) BFMO film, is unique in samples prepared by pulsed laser deposition. Extrinsic dielectric constants at low frequencies are attributed to oxygen vacancies via the Maxwell-Wagner effect. All the samples show saturated hysteresis loops with very small coercive fields at 200 K, indicating the presence of weak ferromagnetism. (C) 2013 American Institute of Physics.
The influence of film thickness and process temperature on c -axis orientation of Bi3TiTaO9 thin films

Dan Xie,Zhigang Zhang,Tianling Ren,Litian Liu

DOI: https://doi.org/10.1007/s10971-006-0202-x

2007-01-01

Journal of Sol-Gel Science and Technology

Abstract:Bi-layered ferroelectric Bi3TiTaO9 (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO2/SiO2/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800 degrees C were found to have much improved remament polarization (P-r ) than that of films annealed at 650 and 750 degrees C. The P-r and coercive field (E-c ) values were measured to be 2 mu C/cm(2) and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.
The influence of film thickness and process temperature on c -axis orientation of Bi 3 TiTaO 9 thin films

Dan Xie,Zhigang Zhang,Tianling Ren,Litian Liu

DOI: https://doi.org/10.1007/s10971-006-0202-x

2006-01-01

Journal of Sol-Gel Science and Technology

Abstract:Bi-layered ferroelectric Bi 3 TiTaO 9 (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO 2 /SiO 2 /(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c -axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c -axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c -axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization ( P r ) than that of films annealed at 650 and 750°C. The P r and coercive field ( E c ) values were measured to be 2 μC/cm 2 and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.

Anisotropic Properties of Bi-2201 Thin Films Grown on Vicinal Substrates

ANISOTROPIC PROPERTIES OF <font>Bi</font>-2201 THIN FILMS GROWN ON VICINAL SUBSTRATES

Growth and Anisotropic Transport Properties of Off-Axis MgB2 Thin Films

Anisotropic Dielectric Properties in Epitaxial Bi3.25la0.75ti3o12 Thin Films along Different Crystal Directions

An integrated approach to doped thin films with strain tunable magnetic anisotropy: Powder synthesis, target preparation and pulsed laser deposition of Bi:YIG

Electrical Characteristics Of (001)- And Random-Oriented Bi3.15nd0.85ti3o12 Thin Films: A Comparative Study

Electrical characteristics of (0 0 1)- and random-oriented Bi3.15Nd0.85Ti3O12 thin films: a comparative study

Influence of the Vicinal Surface on the Anisotropic Dielectric Properties of Highly Epitaxial Ba0.7Sr0.3TiO3thin Films

Electrical characteristics of (0 0 1)- and random-oriented Bi<sub>3.15</sub>Nd<sub>0.85</sub>Ti<sub>3</sub>O<sub>12</sub> thin films: a comparative study

Anisotropic Properties of Single Crystal Bi2Sr2CaCu2O8+δ

Anisotropic Resistivities of Single-Crystalbi2sr2cacu

Effect of Anisotropic Strain on the Charge Ordering Transition in Manganite Films

Structural and Ferroelectric Properties of La Modified Sr0.8bi2.2ta2o9 Thin Films

Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7- δ Thin Films

Thickness Effect On (La0.26bi0.74)(2)Ti4o11 Thin-Film Composition And Electrical Properties

Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films

Colossal Anisotropic Resistivity and Oriented Magnetic Domains in Strained La0.325pr0.3ca0.375mno3 Films

Effect of Anisotropic Strain on the Charge Ordering Behavior in Bi0.4ca0.6mno3 Films

Anisotropy Of Crystal Growth Mechanisms, Dielectricity, And Magnetism Of Multiferroic Bi2femno6 Thin Films

The influence of film thickness and process temperature on <i>c</i> -axis orientation of Bi<sub>3</sub>TiTaO<sub>9</sub> thin films

The influence of film thickness and process temperature on c -axis orientation of Bi 3 TiTaO 9 thin films