Abstract:Studies on quantum dots (QDs) provide great opportunities in single photon detection as well as single circular polarized photon emission, which are the key technology for future quantum information processing. For single photon detection, the quantum-dot-resonant-tunneling-diode (QD-RTD) is evaluated as one of the most promising scheme but still suffering from the ultralow working temperature (～5 K) and lack the capability to discriminate photon numbers. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual QDs coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished. On the other hand, we firstly performed the magneto-optical studies on single InGaAs/GaAs self-assembled QDs. We observed the exciton Zeeman splitting and diamagnetic shift of a single QD under magnetic field, and the exciton g factor and diamagnetic coefficient was extracted by fitting the magnetic field dependent PL energies. By comparing with theories, we discussed on the effect of QD size, shape and composition on these two parameters. Based on these work, we investigated the single QD exciton-cavity mode coupling effect under external magnetic field. By first time we observed the interaction of Zeeman splitted exciton spin states with the cavity mode and realized the selective enhancement of the SE rate of the exciton state with specific spin configuration by means of magnetic manipulation of Purcell effect. In this sense, single QD emission with higher circular polarization degree under non-polarized excitation was realized. Our results have high potential to open up a way to novel quantum light sources and quantum information processing applications based on cavity quantum electrodynamics effects.

Optical and Electrical Investigation of Embedded Self-Assembled InAs Quantum Dot Modulation Doped Field-Effect-Transistors

Optical And Electrical Investigation Of Low Dimensional Self-Assembled Inas Quantum Dot Field Effect Transistors

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Probing the Dark-Exciton States of a Single Quantum Dot Using Photocurrent Spectroscopy in a Magnetic Field

Single Photon Detection and Circular Polarized Emission Manipulated with Individual Quantum Dot

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Study of Valence-Band Intersublevel Transitions in Inas/Gaas Quantum Dots-In-Well Infrared Photodetectors

Tuning Photoluminescence of Single Inas Quantum Dot by Electric Field

Effects of Modulation P-Doping on Thermal Stability of InAs/GaAs Quantum Dot Superluminescent Diodes

InAs Quantum Dots for Quantum Information Processing

Optically Modulated Bistability in Quantum Dot Resonant Tunneling Diodes

Optical And Local Current Studies On Inas/Gaas Quantum Dots

Two-colour In0.5Ga0.5As Quantum Dot Infrared Photodetectors on Silicon

Study Of Self-Assembled Ge Quantum Dot Infrared Photodetectors

Single Inas Quantum Dot Coupled to Different "environments" in One Wafer for Quantum Photonics

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

High Photoexcited Carrier Multiplication by Charged InAs Dots in AlAs/GaAs/AlAs Resonant Tunneling Diode

Single Photon Emissions from InAs/GaAs Quantum Dots Embedded in GaAs/SiO 2 Hybrid Microdisks