Abstract:Embracing the era of higher operating frequencies, expanding functionality, and increased integration scale, modern circuit design relies more and more on the accurate prediction of the electromagnetic (EM) effects resulting from undesired radiation and mutual coupling of digital electronic devices. In this paper, an electromagnetic-physics-based simulation method is proposed, to simulate semiconductor devices and circuits. It utilizes physics-based simulation to analyze semiconductor devices in a circuit and incorporates this physics-based simulation into electromagnetic simulation (e.g., the finite difference time domain (FDTD)), to simulate a circuit at high frequency. To validate the proposed method, sample numerical results on circuits containing a commercial p-i-n diode with model number mot_bal99lt1 at radio frequency (RF) were obtained and compared with measurement data. The comparison showed a good agreement between the two sets of data, which validated the feasibility and accuracy of the proposed algorithm. Moreover, the proposed method can provide a useful physical mechanism for understanding effects on semiconductor devices and circuits.

RF Circuit Simulation Algorithm Based on MOSFET PDE Model

Simulation Of Rf Circuits With A Pde Model Of The Mosfet

Periodic Steady State Analysis Based on MOSFET PDE Model in Radio Frequency Circuits

Periodic Steady State Solution of Coupled Pde-Ode System for Cmos Rf Circuit Simulation

Envelope Simulation Transient Algorithm Analysis of RF Circuit Based on PDE Model of MOS Transistor

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

A Fast PDE Solver for Numerical Solution of Coupled ODE-PDE-AE

A Lumped, Large-Signal Dynamic Model of the Mosfet for Rf Circuit Simulation

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Iterative Solution of ODE-PDE-AE Systems for RF Circuit Simulation.

Periodic Steady-State Analysis of Coupled ODE-AE-CGE Systems for MOS RF Autonomous Circuit Simulation

Analysis of a p-i-n Diode Circuit at Radio Frequency Using an Electromagnetic-Physics-Based Simulation Method

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Nonlinear Modeling of RF Switch Based on COMSOL Parameter Extraction

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

A Physics Based Analytical Model Of Undoped Body Mosfets

Accurate Small-Signal Model and Its Parameter Extraction in Rf Silicon Mosfets

MOS Transistor Model and Fast Timing Simulator

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence.