Abstract:Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as both the gain medium and the cavity for the lasing action: the functional performance (threshold and wavelength) is therefore dependent on both the opto-electronic and crystallographic properties of each nanowire. However, scalable bottom-up manufacturing techniques often suffer from inter-nanowire variation, leading to, often dramatic, differences in yield and performance between individual nanowires. Establishing the relationship between manufacturing controls, geometric and material properties and the lasing performance is a crucial step towards optimisation, however, this is challenging to achieve experimentally due to the complex interdependance of such properties. Here, we present a high-throughput correlative approach to characterise over 5000 individual GaAsP/GaAs multiple quantum well nanowire lasers. Fitting the spontaneous emission provides the threshold carrier density, while coherence length measurements measures end-facet reflectivity. We show that the lasing wavelength and threshold are intrinsically related to the width of a single quantum well due to quantum confinement and bandfilling effects. Unexpectedly, there is no strong relationship between the properties of the lasing cavity (facet reflectivity and distributed losses) and the threshold: instead the threshold is negatively correlated with the non-radiative recombination lifetime of the carriers. This approach therefore provides an optimisation strategy that is not accessible through small-scale studies. The quality and width of the quantum wells limit the threshold of these nanowire lasers, rather than the cavity quality.

Controlled Cleavage of Single Semiconducting Nanowires and Study on the Suitability of Their Use As Nanocavities for Nanolasers

Single Mode Lasing in Coupled Nanowires

Lasing of CdSe/SiO2 Nanocables Synthesized by the Facile Chemical Vapor Deposition Method.

Nanowire lasers as intracellular probes.

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Wavelength-converted/selective Waveguiding Based on Composition-Graded Semiconductor Nanowires.

Lasing Characteristics of Curved Semiconductor Nanowires

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Bending effects on lasing action of semiconductor nanowires.

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Silver Nanowires for Reconfigurable Bloch Surface Waves

Single-nanowire single-mode laser.

Freestanding Nanowire Ring Laser

Optically Controllable Nanobreaking of Metallic Nanowires

Control,optimization and Measurement of Parameters of Semiconductor Nanowires Lasers

Single-Mode Semiconductor Nanowire Lasers With Coupled Cavities

Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling.

Laser-induced Single Point Nanowelding of Silver Nanowires

Generating a Sub-Nanometer-confined Optical Field in a Nanoslit Waveguiding Mode

Holistic nanowire laser characterization as a route to optimal design

Controlled manipulation and in situ mechanical measurement of single co nanowire with a laser-induced cavitation bubble