Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor
Li Zhou,Bai Wei,Li Yuliang,Li Yuanlong,Wang Sheng,Zhang Weihui,Zhao Jiyin,Sun Zhe,Hefei Comprehensive National Science Center,Hefei Comprehensive National Science Center
DOI: https://doi.org/10.1007/s40843-021-1765-x
2021-01-01
Science China Materials
Abstract:Magnetoresistance (MR) phenomenon couples the electron transport with magnetic field, which has been at the forefront of condensed matter physics and materials science. Large-MR behaviors are of particularly importance for magnetic sensor and information memory applications, and their scarcity has aroused intensive research. Moreover, due to the different physical origins, combination of large positive and negative MR (pMR and nMR) in one single compound has rarely been reported. In present work, we achieved a coexistence of large pMR and nMR in Cr2Si2Te6 ferromagnetic semiconductor single crystal with different field configurations. Specifically, a large nMR of about −60% was obtained under the in-plane field, while a large pMR higher than 1000% took over in the out-of-plane direction. We attribute this field direction-sensitive dualistic large MR behavior to the competition and cooperation effect from the ferromagnetic interaction, orbital scattering and electronic correlation that coexist in Cr2Si2Te6, which contribute to nMR, pMR, and nMR, respectively, in dominated temperature and field ranges, and show different weights under different field directions. The elucidated multiple MR mechanism in this ferromagnetic semiconductor will shed light on the pursuit of coexistence of large pMR and nMR for field-sensitive device applications.