Abstract:Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from thermal generation and recombination processes. Although the need for cooling has long been thought to be fundamental and inevitable, it has been recently suggested that Auger recombination and generation rates can be reduced by using the phenomena of exclusion and extraction to produce nonequilibrium carrier distributions. The devices with Auger suppressed operation requires precise control over the composition, and donor and acceptor doping. The successful development of the molecular beam epitaxy (MBE) growth technique for multi-layer HgCdTe makes it possible to grow these device structures. Theoretical calculations suggest that the p n+ layer sequence is preferable for near-room temperature operation due to longer minority carrier lifetime in lightly doped p-HgCdTe absorber layers. However, because the low doping required for absorption and nonequilibrium operation is easier to achieve in n-type materials, and because Shockley-Read centers should be minimized in order to obtain the benefits of Auger suppression, we have focused on p+ n structures. Planar photodiodes were formed on CdTe/Si (211) composite substrates by As implantation followed by a three step annealing sequence. Three inch diameter Si substrates were employed since they are of high quality, low cost, and available in large areas. Due to this development, large area focal plane arrays (FPAs) operated at room temperature are possible in the near future. The structures were characterized by FTIR, x-ray diffraction, temperature dependent Hall measurements, minority carrier lifetimes by photoconductive decay, and in-situ ellipsometry. To study the relative influence of bulk and surface effects, devices with active areas from 1.6 10−5 cm2 to 10−3 cm2 were fabricated. The smaller area devices show better performance in terms of reverse bias characteristics indicating that the bulk quality could be further improved. At 80 K, the zero bias leakage current for a 40 m 40 m diode with 3.2 m cutoff wavelength is 1 pA, the R0A product is 1.1 104-cm2 and the breakdown voltage is in excess of 500 mV. The device shows a responsivity of 1.3 107 V/W and a 80 K detectivity of 1.9 1011 cm-Hz1/2/W. At 200 K, the zero bias leakage current is 5 nA and the R0A product 2.03-cm2, while the breakdown voltage decreases to 40 mV.

Optimizing boron implantation dose of HgCdTe infrared detectors

HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Fabrication and performances of arsenic-doped HgCdTe long-wavelength infrared photodiode arrays

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Analysis of Dark Current Generated by Long-Wave Infrared HgCdTe Photodiodes with Different Implantation Shapes

Enhanced Performance of HgCdTe Long-Wavelength Infrared Photodetectors with Nbn Design

PbTe Thin Film Mid-Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy

Bi2S3Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors

Bi 2 S 3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

Design of a Unipolar Barrier for a Nanocrystal-Based Short-Wave Infrared Photodiode

HgTe Nanocrystal-Based Photodiode for Extended Short-Wave Infrared Sensing with Optimized Electron Extraction and Injection

Dependence of Ion-Implant-Induced Lbic Novel Characteristic on Excitation Intensity for Long-Wavelength Hgcdte-Based Photovoltaic Infrared Detector Pixel Arrays

A bandgap-engineered HgCdTe PBπn long-wavelength infrared detector

Ion Beam Nanostructuring of HgCdTe Ternary Compound

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

Study on electric properties of boron ion implantation of MBE grown HgCdTe

Performance Optimization of Hg1-xCdxTe Photovoltaic Detectors Under Strong Illumination Considering Temperature and Wavelength Dependencies

SRH Suppressed P-G-I Design for Very Long-Wavelength Infrared HgCdTe Photodiodes.

Arsenic doping and activations in HgCdTe by MBE