Porous silicon-based potassium ion selective electrode

Ziqiang Zhu,YanLing Shi,Yanfang Ding,Jianzhong Zhu,Wei Lü,Jian Zi
DOI: https://doi.org/10.1109/ICSENS.2004.1426116
IF: 3.9
2004-01-01
Sensors
Abstract:Porous silicon (PS)-based potassium ion selective microelectrode (K+ISME) was fabricated by using microelectronic planar process and electrochemical anodization etching technique. The apparent sensing area of the K+ISME is 8 mm by 8 mm. The calibration curve for the K+ISME is linear within a wide range of pK=1.0∼4.0. Its slope is 56 mV per decade, which is near Nernst response. The long-term stability of the K+ISME is good. The variation of the response is within ±2 mV during 2 months. Good performances of the K+ISME are attributed to large specific surface area and easily modified microstructure of PS.
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