Study on Modifying the Simulation Model and Computating the Key Parameters of Partial Discharge in Single Void

陈小林,成永红,任成燕,谢小军,杨樾
DOI: https://doi.org/10.3321/j.issn:0253-987X.2004.08.012
2004-01-01
Abstract:Because the existing simulation model of partial discharge ( PD) in the world cannot describe its physical in2 herence objectively , a modified simulation model of PD in a single void is proposed , and some key parameters of this model are determined. This modified model divides the void resistance into gas2gap resistance and interface resistance. The semi2conductive process of the interface resistance is introduced in this model . The time process of discharges and the process of electron avalanche are also considered. According to the physical inherence of PD , some key parameters are calculated approximately so that the simulation is much closer to the real discharge process of voids in insulation sam2 ples. These key parameters include the discharge inception voltage , the discharge extinction voltage , the equivalent resis2 tance , and capacitance of a single void. The simulation results are different from the saw2tooth waves obtained by foreign researchers and are much similar to the measured waveforms , which is the foundation of further studies on the simulation of PD.
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