Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Fabrication and Characterization of Silicon on Permalloy Film

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

A Novel Fabrication and Properties Investigation of Permalloy-SiO2 Granular Films with Induced Anisotropy

Plasma Dry Etched P-Silicon Micromolds for Permalloy Microstructure Array Electrodeposition

Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ

Growth of [001]-oriented polycrystalline Heusler alloy thin films using [001]-textured Ag buffer layer on thermally oxidized Si substrate for spintronics applications

Electrical properties of permalloy/Si (100) thin films

Characterizing metallization introduced polysilicon corrosion of surface micromachined structures with submicron capacitive gap

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface

Electrical Generation and Detection of Spin Waves in Polycrystalline YIG/Pt Grown on Silicon Wafers

Optimization of nanostructured permalloy electrodes for a lateral hybrid spin-valve structure

Manipulation of coupling and magnon transport in magnetic metal-insulator hybrid structures

Characterization of spin pumping effect in Permalloy/Cu/Pt microfabricated lateral devices

Interface-relevant Out-of-plane Spin Polarization in IrMn3/permalloy Bilayers

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Unraveling the origin of antiferromagnetic coupling at YIG/permalloy interface

Controllable Schottky Barriers Between MoS2 and Permalloy

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Ferromagnetic imprinting of spin polarization in a semiconductor

Chemical-mechanical Polishing As an Enabling Technology for Giant Magnetoresistance Devices