Materials Characterization and Electrical Performance of Bilayer Structures for Enhanced Electrodeposition in Programmable Metallization Cells
Ninad Chamele,Mehmet B. Balaban,Arshey Patadia,Smitha S. Swain,Yago Gonzalez‐Velo,Manuel Roldan,Michael Kozicki,Ninad Chamele,Mehmet B. Balaban,Arshey Patadia,Smitha S. Swain,Yago Gonzalez‐Velo,Manuel Roldan,Michael Kozicki
DOI: https://doi.org/10.1002/aelm.202100897
IF: 6.2
2021-12-16
Advanced Electronic Materials
Abstract:Long channel lateral programmable metallization cell (PMC) devices, in which a metal electrodeposit is formed on a solid electrolyte between two coplanar electrodes several microns apart, have a variety of applications beyond standard microelectronics. Whereas fast electrodeposit growth over considerable distances can be achieved using high ion mobility chalcogenide electrolytes, the use of more foundry‐friendly materials, including copper‐doped transition metal oxides, leads to extremely low electrodeposit growth rates due to their low ion mobility and high resistivity. In this paper, a material system comprising a Cu2O/CuWO3 bilayer formed by low temperature oxidation of Cu on WO3 is examined. The Cu2O overlayer provides a low resistance parallel path for electrons, allowing electrodeposition to occur along the entire length of the device, thereby increasing the rate at which the electrodeposit fills the channel. A study of devices prepared under different conditions, resulting in different copper oxide thicknesses and copper concentrations in the layers, shows the influence of processing conditions on material composition, activation energy for current transport, electrodeposit morphology, and electrical characteristics. It is demonstrated that a very wide range of operating conditions is possible, including the bridging of 14 μm long channels in under 3 s using 2 V bias. Here a method is presented for enhancing the electrodeposit growth rate in oxide‐based complementary metal–oxide–semiconductor compatible lateral programmable metallization cell More‐Than‐Moore devices. The device channel has a bilayer medium comprising an electron supplying copper oxide on top of a copper–tungsten oxide electrolyte formed simultaneously in a simple low‐temperature process.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology