Abstract:A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (Ron) for the ST SOI is obtained due to the variable thickness SOI layer.

A New 2-D Analytical Model of Double Resurf in Soi High Voltage Devices

A 2D Analytical Model of SOI Double RESURF Effect

An Analytical Model for the Surface Electrical Field Distribution and Optimization of Bulk-Silicon Double RESURF Devices

Analytical Model for the Surface Electrical Field Distributions of Double RESURF Devices with Gaussian-doped P-top Region

An analytical model for high voltage thin-film Silicon On Insulator RESURF devices

An Analytical Model for the 3D-RESURF Effect

Modeling of a Triple Reduced Surface Field Silicon-on-insulator Lateral Double-Diffused Metal–oxide–semiconductor Field-Effect Transistor with Low On-State Resistance

An analytical model for SOI triple RESURF devices

A New Analytical Model For The Surface Field Distribution And Optimization Of Thin Film Soi Resurf Devices

A Novel RESURF LDMOS with Embedded CB-layer

Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

Analytical Models for the Electric Field Distributions and Breakdown Voltage of Triple RESURF SOI LDMOS

A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF Devices

Quasi-2-D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor

A New SOI High-Voltage Device with a Step-Thickness Drift Region and Its Analytical Model for the Electric Field and Breakdown Voltage

Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor

A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER

An Analytical Model for Electric Field Distribution in SOI RESURF Structure with N Buffer Layer

A new analytical model for optimizing SOI LDMOS with step doped drift region

Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile

A Concise Analytical Model For The Surface Field Distribution Of Tfsoi Resurf Devices Including Interface Charge Effect