Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Behavior of Oxidation-Induced Stacking Faults in Annealed Czochralski Silicon Doped by Nitrogen

Effect of Oxygen Precipitates and Induced Dislocations on Oxidation-Induced Stacking Faults in Nitrogen-Doped Czochralski Silicon

Oxidation-Induced Stacking Faults in Nitrogen-Doped Czochralski Silicon Investigated by Transmission Electron Microscope

Oxygen Precipitation in Nitrogen-Doped Czochralski Silicon

Effects of High Temperature Rapid Thermal Processing on the Formation of Oxidation Induced Stacking Faults in 300 Mm Nitrogen-Doped Czochralski Silicon Wafers

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Transmission Electron Microscopic Observation of Oxygen Precipitates in Nitrogen-Doped Silicon

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Grown-In Defects in Nitrogen-Doped Czochralski Silicon

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

Oxygen Annealing Behavior in Multicrystalline Silicon

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon