Simulation of annealing stress in Ag/Cu thin films

安兵,张同俊,袁超,崔昆
DOI: https://doi.org/10.3321/j.issn:1005-3093.2003.05.002
2003-01-01
Abstract:The stress-temperature curve of Ag/Cu thin films was studied by substrate curvature technique in a temperature range of room temperature to 500°C. The as-deposited film-stress is -250 MPa, while after annealing, the stress turns to a tensile stress, 370 MPa. A model based on deformation mechanism maps was used for simulating the stress-temperature curve. The results show that the main relaxation mechanisms, which include dislocation glide, power-law creep and diffusion creep, vary with the temperature and stress. However, the strain rates in thin films are smaller than those of bulk materials, making the strain more difficult under the same stress. During annealing, Ag takes the lead in the stress relaxation, and when all of its creep activation energies in films are enhanced up to 1.25-1.35 times of those of Ag bulk materials, the good agreement between simulated curves and measured is obtained.
What problem does this paper attempt to address?