The ablation process induced by femtosecond laser in transparent dielectrics

XiaoXi Li,Tianqin Jia,Donghai Feng,Zhizhan Xü
DOI: https://doi.org/10.1117/12.540643
2003-01-01
Abstract:The ablation process in sapphire and fused silica are studied with laser at 800nm and 400nm respectively. Comparing with the features of the ablated craters induced by different laser, we find that lasers with short wavelength and pulse duration can produce more exquisite ablation crater with small area and steep gradient. By means of determining the F-th with detection of the scattered light, the developments of the threshold fluence of dielectrics as a function of pulse duration are presented! While interpreting our results with existent model of optical breakdown, we discuss the excitation mechanism of conduction band electrons (CBE) in transparent dielectrics.
What problem does this paper attempt to address?