Optoelectronic Investigation of Novel PbSrSe Thin Films for Mid-Infrared Device Applications

WZ Shen
DOI: https://doi.org/10.1117/12.479626
2003-01-01
Abstract:We review our recently combined study of temperature-dependent photoluminescence, absorption, and photocurrent measurements with theoretical models on PbSrSe thin films grown by molecular beam epitaxy for the key properties of PbSrSe thin films and their microstructures. The derived empirical equations for band gaps, effective masses, and refractive indices have been employed successfully in PbSrSe/PbSe multiple quantum well (MQW) mid-infrared laser systems, which opens the way for the design of IV-VI MQW mid-infrared lasers. The infrared detection of PbSrSe thin films has also been demonstrated at different temperatures, where the spectral intensity and wavelength coverage are determined by the band gap and the film thickness.
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