Inhibition mechanism of SO4 2- in AC etching of A1 - Foil

Zhesheng Feng,Zhanwen Xiao,Bangchao Yang
2003-01-01
Abstract:Pitting corrosion behavior of high purity Al - foil in 2 mol/L HCL and 2 mol/L HCl + 0.5 mol/L H2SO4 solution was investigated by cyclic triangular wave potentiodynamic method. The current signals were analyzed by Daubechies2 wavelet transform yielded time - frequency information. The inhibition mechanism of SO2 4 - in AC etching of high purity Al - foil was discussed. A new model of oxygen vacancy mechanism for high purity aluminum pitting corrosion indicated that if the pH of the solution is less than the isoelectronic point, the oxide film on aluminum will acquire positive charges, this positive charges are caused by the characteristic adsorption of Cl- and SO2 4 -. Cl- transport through the oxide film by means of oxygen vacancies. O2- dissociate from SO2 4 - under the function of local electric field captured the oxygen vacancy, decreased the concentration of oxygen vacancies, modified the transport network of Cl- in the oxide film. As the result, the probability of new pit initiation increased, this is high performance of inhibition of SO2 4 - acted in AC etching of Al - foil.
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