The cyclic and continuous oxidation of Si3N4 with and without aluminum implantation

Jianqing Wu,Yingjun Wang,Jiandong Ye,Henry Du
2002-01-01
Key Engineering Materials
Abstract:The cyclic and continuous oxidation behaviors of a HIP Si3N4 were investigated at the temperatures 1100°C and 900°C. The Si3N4 shows the same oxidation resistance in both cyclic and continuous oxidations, the oxide layer is not protective against oxidation in nature. The oxidation rate-controlling step is the outward diffusion of the cations from substrate to oxide. Al implantation can perfect the structure of oxide scale to improve the oxidation resistance of this Si3N4 at the lower temperature, and change the oxidation rate-controlling step to the diffusion through the oxide scale.
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