In-Plane and Out-Of-Plane Magnetoresistivity in A Mtg Er-Doped Ybco Crystal

T Yang,ZH Wang,H Zhang,Y Nie,J Fang,H Luo,XF Wu,SY Ding
DOI: https://doi.org/10.1088/0953-2048/15/4/318
2002-01-01
Abstract:We have measured the temperature dependence of top and bottom voltage signals of a Y0.8Er0.2Ba2Cu3O7-delta crystal in magnetic field up to 7.5 T parallel to the c-axis using the pseudo-flux-transformer method. The results show that in a dissipative regime the voltage signal on the side of the applied current contacts is more than that on the opposite side; meanwhile the bottom voltage signal shows a field-dependent peak effect near the critical temperature T-c. We calculated the true resistivities rho(ab) and rho(c) of the crystal within an anisotropic model. The difference between the calculated rho(ab) and rho(c) and the experimental values rho(ab)(st) and rho(c)(st) is helpful in understanding flux dynamic behaviour. Based on the Yeshurun-Malozemoff model, we have investigated temperature and field dependences of effective activation energy along the ab-plane and c-axis obtained from the rho(ab)(T) and rho(c)(T), respectively. The temperature dependence of effective activation energy along the c-axis displays a good thermally activated flux flow (TAFF) behaviour. In the TAFF regime the field dependence of effective activation energy follows a power behaviour, U(H) = 4.24 x 10(4) H-1.1. The TAFF regime and the coupling between the layers have been discussed.
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