Composition depth profiles in modified layers of aluminum alloy 2024 implanted with N / Ti by PBII

廖家轩,夏立芳,孙跃
DOI: https://doi.org/10.3321/j.issn:0367-6234.2002.01.012
2002-01-01
Abstract:The effect of parameters (implanting voltage (energy), implanting time (dose) and titanium target sputtering current) on the composition depth profiles in the modified layers of aluminum alloy 2024 implanted with Ti after pre-implanted with N by PBII was characterized by X-ray Photoelectron Spectroscopy (XPS). The results show that N and Ti can be implanted into 2024 effectively, and the depth profile of N in the implanted layer is near Gaussian Distribution, and that of Ti decreases gradually along the implanting direction from the surface. The process of implanting Ti makes the depth profile of the implanted N broaden. As the implanting voltage (energy) and the time (dose) are increasing, the depth profile and the content of Ti increase. The result also shows that there is a max of implanting time (dose) or/and titanium target sputtering current. Implanted with Ti at less than the max value, the preponderance of implantation for Ti has been represented without any Ti deposited layer on the surface, while implanted at more than the max value, the preponderance of deposition for Ti has been exhibited with an obvious Ti layer on the surface.
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