Abstract:In this work, phase change chalcogenide Ge2Sb2Te5 (GST) thin films were fabricated by magnetron sputtering. The optical properties, especially the optical constants (refractive index and extinction coefficient), of such alloys were systematically studied by investigating their thermally and photo-thermally induced switching between different phases. The results show that GST films are highly tunable in microstructure and optical constants, either by post-annealing at 160 degrees C, 200 degrees C, 250 degrees C and 350 degrees C, respectively, or by laser irradiation of 1 mW, 3 mW, 5 mW and 10 mW power with beam diameter of 7 m at 532 nm, respectively. From the structural analysis, we can clearly observe different crystallinities and chemical bonding in the different post-treated GST films. The optical constants of GST films under various phases were obtained from spectrophotometry, by fitting their transmittance data with the Tauc-Lorentz (TL) dispersion model. The refractive index and extinction coefficient exhibit notable change upon annealing and laser irradiation, specifically at 1550 nm, from 3.85 (amorphous) to 6.5 (crystalline) in refractive index. The optical constants have been proved capable of fine tuning via the laser irradiation method. Hence, the pronounced adjustability in optical properties due to rapid and repeatable phase change render GST suitable for tunable photonic devices.

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New Approach to Initialization-Free Phase-Change Optical Disk

Laser-induced Changes on the Complex Refractive Indices of Phase-Change Thin Film

Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

Study of the Partial Crystallization Properties of Phase-Change Optical Recording Disks

Thermodynamic Parameters, Microstructures and Optical Properties of Sb-Se-Based and Ge-Sb-Te-Based Phase Change Optical Disc Recording Media

Study of the Dynamic Crystallization Behavior of GeSbTe Phase Change Optical Disk

Changes of optical, dielectric, and structural properties of Si 15Sb85 phase change memory thin films under different initializing laser power

Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

Investigation on the Optical Phase Change Properties of Intrinsic GeSb and Ti-doped GeSb

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Effects Of Preparation Parameters On The Optical Constants Of Ge2sb2te5 Thin Films

Dependence of Optical Constants on Film Thickness of Phase-Change Media

Initialization-free Dual-Layer Phase-Change Optical Disk

Study of the Superlattice-Like Phase-Change Optical Recording Disks

Effects of Technology Parameters on the Reflectivity of the New Type AgInSbTe Phase Change Films

Crystallization of Ge-doped AgInTeSb phase-change optical disk media

First principles study of the optical contrast in phase change materials

Properties and Reactive Sputtering Parameters of GeN Film for High-Density Phase-Change Optical Disk