Abstract:In this study, the authors provide an improved and updated comprehension on Silicon Carbide (SiC) Gate Turn‐off (GTO)'s turn‐on transient by means of integrated muti‐cell TCAD simulations. By means of the physical characterization conducted in this paper, the physical mechanisms dominating chip device's current inhomogeneity are uncovered in depth, and the method of enhancing the current homogeneity among cells is proposed and extensively discussed. Furthermore, based on the conducted analysis above, the most possible reason for the extremely current rising transient during the initial pulsed current stage of SiC GTO thyristor is subsequently speculated and experimentally verified. Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on current heterogeneity over the chip device. In this paper, a practical integrated multi‐cell simulation is performed to physically characterize the turn‐on transient of SiC GTO thyristor. Through examining electrical coupling between adjacent cells caused by both parasitics of electrode metallization and carrier travelling via SiC, the current distributions are observed, and the carrier transport dynamics are analyzed in detail. Furthermore, physical mechanisms dominating the current heterogeneity among multi‐cells are discovered in depth. It is revealed that the current heterogeneity during the turn‐on transient is primarily resulted from the Gate signal delay caused by the Gate Runner metallization, and the lateral interaction from adjacent semiconductor regions adds to this inhomogeneity; however, this situation can be improved once the electrical distance between each Anode contact and the Anode electrode gets lowered. Design method for turn‐on performance improvement is also proposed accordingly. Besides, based on the analysis conducted on the multi‐cell simulation results, the possible reason of the extremely slow current rise transient phase is speculated and experimentally verified. The improvement in the comprehension of SiC GTO's turn‐on transient, which cannot be obtained from the traditional investigation from the viewpoint of one elementary cell, will provide guiding principles helping in directing future efforts to advance the improvement of device design technology.

Impacts Of Gate Metal Parasitics And Non-Uniform Cell On The Mto'S Turn-Off Performance

Modeling and Analysis of 55 Mm 4.5-Kv Mto

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

TCAD Simulation Analysis of Vertical Parasitic Effect Induced by Pulsed Γ- Ray in NMOS from 180 Nm to 40 Nm Technology Nodes

Analysis of N-Channel MOS-controlled Thyristors

Effects of gate to drain capacitance to the AC characteristics of trench power MOSFET

Impacts of eliminating ungated access regions on DC and thermal performances of GaN-based MIS-HEMT

Electro-Thermo-Mechanical Analysis and Modeling of High-Power Intergrated Gate Commutated Thyristors

MTO/sup TM/ Thyristor: an Efficient Replacement for the Standard GTO

A Physics-Based Mto Model For Circuit Simulation

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Electro-thermo-mechanical analysis and modelling of high-power Intergrated Gate Commutated Thyristors

Experimental Investigation on the Turn-Off Failure Mechanism of IGCT

Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective Hole Injection

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Impact of Chaos on MOSFET Thermal Stress and Lifetime

The performance measure of GS-DG MOSFET: an impact of metal gate work function

Electric-Magnetic-Thermal Co-simulation Method for SiC Gate Turn-off Thyristor Module

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method