Abstract:In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail. The influence of deposited charges on the electric field in the depletion region is investigated. The electric field decreases in a short time period due to the neutralization of the space charge. After that, the electric field increases first and then decreases when the deposited charge is moved out. The movement of the deposited charge in the body mainly occurs through ambipolar diffusion because of its high-density electrons and holes. The derivation of the variation in electric field in the depletion region is modeled in the physical process according to the analysis. In combination with the ambipolar diffusion model of excessive charge in the body, a physics-based model is built to describe the current pulse in the drain terminal. The proposed model takes into account the influence of multiple factors, like linear-energy transfer (LET), drain bias, and the doping concentration of the well. The model results are validated with the simulation results from TCAD. Through calculation, the root-mean-square error (RMSE) between the simulation and model is less than 3.7 × 10-4, which means that the model matches well with the TCAD results. Moreover, a CMOS inverter is simulated using TCAD and SPICE to validate the applicability of the proposed model in a circuit-level simulation. The proposed model captures the variation in net voltage in the inverter. The simulation result obviously shows the current plateau effect, while the relative error of the pulse width is 23.5%, much better than that in the classic model. In comparison with the classic model, the proposed model provides an RMSE of 7.59 × 10-5 for the output current curve and an RMSE of 0.158 for the output voltage curve, which are significantly better than those of the classic model. In the meantime, the proposed model does not produce extra simulation time compared with the classic double exponential model. So, the model has potential for application to flow estimation of the soft error rate (SER) at the circuit level to improve the accuracy of the results.

A Physics-Based Mto Model For Circuit Simulation

Modeling Effects of Velocity Overshoot in Extremely Scaled MOSFETs

Modeling and Analysis of 55 Mm 4.5-Kv Mto

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

Physics-Based Model for Emitter Turn-Off Thyristor (Eto)

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

A Complete Composite GTO Model for Circuit Simulations

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

High Order Distribute Circuit Model of Laminated Busbars and Its Order Reduction Techniques for Simulating Fast Turn-on and Turn-off Transients

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Physics-based Compact Model of Integrated Gate-Commutated Thyristor with Multiple Effects for High-Power Application

A Compact Model of Shield-Gate Trench MOSFET Based on BSIM4

A Unified MOSFET Channel Charge Model for Device Modeling in Circuit Simulation

A Physics-Based Compact Model of Shield Gate Trench MOSFET.

Bsim5: an Advanced Charge-Based Mosfet Model for Nanoscale Vlsi Circuit Simulation

A Lumped, Large-Signal Dynamic Model of the Mosfet for Rf Circuit Simulation

Behavioral electrothermal modeling of MOSFET for energy conversion circuits simulation using MATLAB/Simulink

An IGCT Unified Simulation Model Based on the Electrical Model and Thermistor

A Charge Based Non-Quasi-Static Transient Model for Soi Mosfets

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal-Oxide-Semiconductor Field-Effect Transistor

Modeling of Sic Mosfet in Matlab/Simulink