Studies of MBE-Grown ZnSxSe1- x Films for Liquid-Crystal-Light-Valve

沈大可,Sou.I.K,韩高荣,杜丕一,阙端林

DOI: https://doi.org/10.3969/j.issn.1672-7126.2002.06.002

2002-01-01

Abstract:The structure and operation of the novel ZnSxSe1-x visible blind ultraviolet liquid crystal light valve (UV-LCLV) were described. The optoelectronic requirements of ZnSxSe1-x photosensor for the device were derived and discussed from the UV LCLV electric model and equivalent circuits. Suitable polycrystalline ZnSxSe1-x film with (1ll) preferential growth orientation that provides a good matching with the requirements of LCLV were deposited on ITO coated glass by molecular beam epitaxy (MBE). Room temperature photo-responsivity measurements show that the visible rejection power can reach as high as 3 orders in magnitude. The cutoff wavelength of the response is between 360 nm 410 nm and follows the energy-gap dependence on the Se composition of the films. The results of DC resistivity measurement reveal that the resistivity of the films decreases as its crystal size increases. The results of AC impedance measurement further indicate that the ratio of photo/dark impedance of the films is between 0.22-0.36 at the low operation frequency (<200 Hz) of LCLV.