Abstract:Lead-based organic or inorganic halide perovskites (ABX3, A= organic or inorganic cation, B= lead cation, and X= Cl, Br, I) are well-known for their excellent properties and technologically suitable for many optoelectronic devices. However, the stability of organic hybrid compounds as well as the toxicity of lead (Pb) inhibit the development and commercialization of these devices. Consequently, Pb-free, all-inorganic halide perovskites are now the subject of the latest research interest. In this work, we report on the synthesis and properties of Pb-free all-inorganic Cs3Sb2X9 (X= I, Br) perovskites thin films by a two-step CVD approach. The obtained Cs3Sb2I9 and Cs3Sb2Br9 thin films show good crystallinity and exhibit high exciton binding energies with large stoke shifts of ~570 and ~630 meV, respectively. Refractive indices of 2.0 and 1.7 were obtained for Cs3Sb2I9 and Cs3Sb2Br9 thin films at their respective emission energy. The optical bandgap was confirmed to be 2.2 and 2.85 eV for Cs3Sb2I9 and Cs3Sb2Br9 thin films. Photoconductive devices fabricated using these thin films exhibit a commendable performance with responsivity up to 54.5 and 3.6 mA/W and high detectivity reaching 4.3×1010 and 1.6×1010 Jones for Cs3Sb2I9 and Cs3Sb2Br9, respectively. Moreover, a stable photoswitching property with fast rise and decay times of 50 ms and 30 ms for Cs3Sb2I9 and 108 ms and 56.2 ms for Cs3Sb2Br9 film photodetectors was observed. The thin films exhibit excellent long-term stability even stored without encapsulation in ambient air. The properties of these crystalline Cs3Sb2X9 perovskite films and their photodetectors' performance suggest that they can be promising candidates for a wide range of optoelectronic devices.

Cl−1 Doped Sb2Se3 Polycrystals and Films for Optoelectric Application

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Crystal Growth Promotion and Defect Passivation by Hydrothermal and Selenized Deposition for Substrate-Structured Antimony Selenosulfide Solar Cells