Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.

Refractive Indexes of Oxidized Thin Films Deposited by Ion Beam Sputtering

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Optical and Mechanical Properties and Microstructures of Nb2O5, Ta2O5 and SiO2 Thin Films Prepared by Ion Beam Sputtering

Reflected Gaussian beam splitting phenomenon in the thin-film Fabry-Perot filter

Determination Of Refractive Indices And Thicknesses Of Ba0.7sr0.3tio3 Films With And Without Mgo (001) Buffer Layer On Silicon Substrate

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Property comparison of optical thin films prepared by E-beam, ion assisted deposition and ion beam sputtering

Physical Mechanism of Refractive Index Inhomogeneity of Hafnium Oxide Thin Film Prepared by Ion Beam Sputtering Technique

Study on the Extraction of Optical Constants and Thickness of Nanometer-scale Film

Effect of Oxygen Flow Rate on Microstructure Properties of SiO2 Thin Films Prepared by Ion Beam Sputtering

Effect of ionic oxygen concentration on properties of SiO2 and Ta2O5 monolayers deposited by ion beam sputtering

Refractive index of thin films of SiO2, ZrO2, and HfO2 as a function of the films' mass density

Optical Multicoating Using Low-Refractive-Index SiO2 Optical Thin Films Deposited by Sputtering and Electron Beam Evaporation

Optical Properties of Thin Oxide Films Produced by Energetic Ion Beams

Physical Model of Optical Constants of SiO2 Thin Films

SiO2/TiO2 thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating

Influence of Deposition Parameters on Optical Properties of Silicon Oxycarbide Thin Films

Experimental And Computational Studies On The Refractive Index And Interface State For Nano Interface Of Sio2/Si And Si3n4/Sio2/Si