Effect of Oxygen Doping and High Pressure on the Electronic Structure of Hgba2cuo4+Delta and Superconductivity

S Zhang,Q Han,LY Zhang
DOI: https://doi.org/10.1142/s021797920100485x
2001-01-01
Abstract:The effects of oxygen doping (delta = 0 similar to 0.19) and high pressure (P = 0 similar to 5.07 GPa) on the electronic structure of HgBa2CuO4+delta have been studied by the recursion method. The hole concentration of the CuO2 layer increases monotonically as 6 increases from 0 to 0.19. Each excess oxygen atom contributes about 1.9 holes to the CuO2 layer. The pressure-induced charge transfer, dn/dP, decreases for increasing 6, vanishing at over-doping level, which is consistent with the delta -dependence of dT(c)/dP observed in experiments.
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