Electronic Structure of Hg 0.8 Pb 0.2 Ba 2 Ca 2 Cu 3 O 8+δ : the Role of Pb Doping, Oxygen Doping and High Pressure

Lü Jing,Zhang Li-yuan,Hao Xue-jun
DOI: https://doi.org/10.1088/1004-423x/6/1/008
1997-01-01
Acta Physica Sinica (Overseas Edition)
Abstract:The effects of Pb doping, oxygen doping (δ = 0.1, 0.2, 0.4 and 0.5) and high pressure (4, 8, 15 and 20 GPa) on the electronic structure of Hg0.8Pb0.2Ba2Ca2Cu3O8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO2 layers. The optimal δ is estimated to be around 0.4. The hole concentration increases initially with pressure but decreases as P > 8 GPa (i.e., dn/dP does change sign at similar 8 GPa). The suppressed Tc(P) by Pb substitution has to be described in the modified Neumeier's model.
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