ELECTRONIC-STRUCTURE OF HGBA2CA2CU3O8+DELTA - THE ROLE OF O(4) AND HIGH-PRESSURE

XJ HAO,LY ZHANG,J SHEN,HY WANG
DOI: https://doi.org/10.1088/0953-8984/6/36/020
1994-01-01
Abstract:The electronic structure of HgBa2Ca2Cu3O8+delta with various delta (0, 0.12, 0.2 and 0.4) and pressures (ambient pressure, 5 GPa, 10 GPa and 20 GPa) has been calculated by the recursion method. Our results show that the electronic structure of this series is highly two dimensional with a large N(E(F)). The hole concentration of the CuO2 layers and N(E(F)) increase monotonically as delta increases from 0 to 0.4. We thus suggest that the ideal delta should be 0.4. With increasing pressure, the hole concentration increases further and E(F) rises. The relationship between T(c) and pressure can be described by the same model of YBa2Cu3O7-delta.
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