Abstract:In‐situ X‐ray photoelectron spectroscopy reveals a complex growth mechanism of atomic layer deposited CeOx films, deviating from an ideal layer‐by‐layer growth. The initial stages show higher growth per cycle, Ce3+ states at the interface, and more carbon residues compared to the steady growth stage. The film substrate interaction at the interface induces this complex behavior. Thermal atomic layer deposition (ALD) of cerium oxide using commercial Ce(thd)4 precursor and O3 on SiO2 substrates is studied employing in‐situ X‐ray photoelectron spectroscopy (XPS). The system presents a complex growth behavior determined by the change in the reaction mechanism when the precursor interacts with the substrate or the cerium oxide surface. During the first growth stage, non‐ALD side reactions promoted by the substrate affect the growth per cycle, the amount of carbon residue on the surface, and the oxidation degree of cerium oxide. On the contrary, the second growth stage is characterized by a constant growth per cycle in good agreement with the literature, low carbon residues, and almost fully oxidized cerium oxide films. This distinction between two growth regimes is not unique to the CeOx/SiO2 system but can be generalized to other metal oxide substrates. Furthermore, the film growth deviates from the ideal layer‐by‐layer mode, forming micrometric inhomogeneous and defective flakes that eventually coalesce for deposit thicknesses above 10 nm. The ALD‐cerium oxide films present less order and a higher density of defects than films grown by physical vapor deposition techniques, likely affecting their reactivity in oxidizing and reducing conditions.

Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition

Investigation of Growth, Structural and Optical Properties of CeO2 Nanocrystalline Thin Films Prepared by Pulsed Spray-Evaporation Chemical Vapor Deposition (PSE-CVD)

Changes in the structural and optical properties of CeO2 nanocrystalline films: Effect of film thickness

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition

Nucleation and Growth of Anodic Electrodeposited Cerium Oxide Thin Film

The Mechanism of the Nano-Ceo2 Films Deposition by Electrochemistry Method As Coated Conductor Buffer Layers

Fabrication of cerium-doped β-Ga2O3 epitaxial thin films and deep ultraviolet photodetectors

Preparation and Characterization of Cerium (iv) Oxide Thin Films by Spray Prolysis Method

Strain Evolution and Morphological Transition of Magnetron-Sputtered CeO2 Thin Films Induced by Deposition Parameters

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates

Vapor deposited CeO 2 nanostructures by atmospheric plasma spray with reversible wettability

Deposition Of Ceo2 On Tio2 Nanorods Electrode By Dielectric Barrier Discharge Plasma To Enhance The Photoelectrochemical Performance In High Chloride Salt System

XPS studies of nanometer CeO2 thin films deposited by pulse ultrasonic spray pyrolysis

In Situ X‐Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO2: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth

Vapor Deposited CeO2 Nanostructures by Atmospheric Plasma Spray with Reversible Wettability

Atomic Layer Deposition of CeO2 Film with a Novel Heteroleptic Ce(III) Complex

Growth orientation and surface morphology of CeO2 films for high-Jc YBCO films on biaxially-textured Ni tape by PLD

Structural, Optical and Electrical Properties of CeO 2 Thin Films Simultaneously Prepared by Anodic and Cathodic Electrodeposition

Surface Morphology and Facets Evolution of Ceo2 Nanoarray Superstructures Fabricated by Pulsed Laser Deposition