Epitaxial growth and exciton recombination properties of CdTe/Cd0.8 Mn0.2 Te quantum wells

张希清,梅增霞,段宁,Z K Tang
DOI: https://doi.org/10.3321/j.issn:1001-9731.2001.03.020
2001-01-01
Abstract:CdTe/Cd0.8 Mn0.2Te quantum wells were grown by molecular beam epitaxy on substrate GaAs. The structure and exciton optical properties in CdSe/CdZnSe MQW are investigated by means of XRD spectra, photoluminescence spectra with low excitation power 77 K and time-resolved photoluminescence spectra with different excitation power. The exciton emission linewidth is about 9 nm at 77 K. When weaker excitation was used. radiative recombination decay time of the exciton was reduced as the excitation intensity was decreased, the results indicate that the dominant mechanism may be quenching of exciton emission by impurities and defects.
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