Abstract:Iron impurities are believed to act as deep acceptors that can compensate for the n-type conductivity in as-grown Ga2O3, but several scientific issues, such as the site occupation of the Fe heteroatom and the complexes of Fe-doped β-Ga2O3 with native defects, are still lacking. In this paper, based on first-principle density functional theory calculations with the generalized gradient approximation approach, the controversy regarding the preferential Fe incorporation on the Ga site in the β-Ga2O3 crystal has been addressed, and our result demonstrates that Fe dopant is energetically favored on the octahedrally coordinated Ga site. The structural stabilities are confirmed by the formation energy calculations, the phonon dispersion relationships, and the strain-dependent analyses. The thermodynamic transition level Fe3+/Fe2+ is located at 0.52 eV below the conduction band minimum, which is consistent with Ingebrigtsen's theoretical conclusion, but slightly smaller than some experimental values between 0.78 eV and 1.2 eV. In order to provide direct guidance for material synthesis and property design in Fe-doped β-Ga2O3, the defect formation energies, charge transitional levels, and optical properties of the defective complexes with different kinds of native defects are investigated. Our results show that VGa and Oi can be easily formed for the Fe-doped β-Ga2O3 crystals under O-rich conditions, where the +3 charge state FeGaGai and −2 charge state FeGaOi are energetically favorable when the Fermi level approaches the valence and conduction band edges, respectively. Optical absorption shows that the complexes of FeGaGai and FeGaVGa can significantly enhance the optical absorption in the visible-infrared region, while the energy-loss function in the β-Ga2O3 material is almost negligible after the extra introduction of various intrinsic defects.

Defect structures for Fe3+, Mn2+, and Ni3+ impurities in wuritzite GaN crystals

Electronic Structures of Wurtzite Gan with Ga and N Vacancies

Structural Stability and Magnetism of Γ′-Fe4n and CoFe3N Compounds

Studies of Electron Paramagnetic Resonance Parameters and Defect Structures for Ti2+ and V3+ Ions in Cds Crystals

Electronic structure of rare-earth impurities in GaAs and GaN

Role of Nitrogen Split Interstitial Defects in the Magnetic Properties of Cu-doped GaN

INVESTIGATIONS ON THE LOCAL STRUCTURE AND THE EPR PARAMETERS FOR Cu2+-DOPED GaN

Energetics, electronic structure and local magnetism of single 3d impurity in GaAs

Optoelectronic properties exploration of native point defects on GaN nanowires

Studies of the G Factors and Zero-Field Splitting for the Trigonal Ti2+GaSp Defect Center in GaP Crystal

Influence of oxygen impurities in generating ferromagnetism in GaN doped with Mn, Fe, and Cr

Site Occupation and Electronic-Structure of an Interstitial Mn2+ Impurity in Gap

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Electron Spin Resonance of Ni-doped CuGeO$_3$ in the paramagnetic, spin-Peierls and antiferromagnetic states: Comparison with non-magnetic impurities

Calculated electron paramagnetic resonance $g$-tensor and hyperfine parameters for zinc vacancy and N related defects in ZnO

Theoretical investigation of electronic structure and thermoelectric properties of C N point defects in GaN

Role of Native Defects in Fe-Doped β-Ga2O3

Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS

Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures

Theoretical examination of defect structures and spin Hamiltonian parameters of manganese (II)- and cobalt (II)-doped ZnO nanowires