Abstract:The microstructure, optical absorption ties and luminescence function of GaN thin films grown on the sapphire substrate with the buffer layer of GaN by metal-organic chemical vapor deposition (MOCVD) have been studied by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), infrared transmission spectrum, ultraviolet-visible absorption spectrum and photoluminescence. XRD results show that the crystal structure of GaN is hexagonal wurtzite structure. The thin films have preferred orientation in c axis with very high quality. TEM images of the cross-sectional specimen show that the thickness of every layer in the superlattice are uniform with the average period of 13.3 nm, but there are high-density dislocations in the superlattices region. From related optical experimental data, it is found that optical absorption edge is at about 370 nm. The theory calculation indicates that the five samples are direct transition semiconductor and band-gaps are about 3.4 eV. The refractive indexes of the samples increase with photon energy enhancing and decrease with the wavelength increasing. The results show that the extinction coefficients reach the lowest point at 370 nm. Photoluminescence test results show that superlattice has preferable luminescence property. In addition, the yellow luminescence is found in all samples. © 2005 Trans Tech Publications, Switzerland.

Optical Transitions in Cubic Gan Grown by Metalorganic Chemical Vapor Deposition on Gaas (100) Substrate

Free Excitonic Transitions in GaN, Grown by Metal-Organic Chemical-Vapor Deposition

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Optical Transitions In Ganas/Gaas Single Quantum Well

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Optical property studies of GaN films grown by MOCVD

Neutral-Donor-Bound Exciton Recombination Dynamics in Gan Grown by Metalorganic Chemical-Vapor-Deposition

Optical Properties and Exciton Localization in Ganas/Gaas

Influences Of Initial Buffer Layer Deposition On Electrical And Optical Properties In Cubic Gan Grown On Gaas(100) By Metalorganic Chemical Vapor Deposition

The Morphology and Optical Characterizations of Algan/Gan Based on Al2o3 Prepared by Mocvd

Optical properties of GaN film grown by metalorganic chemical vapor deposition

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Optical Study of Electronic States in Gaasn

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Optical Characteristics of C-Doped GaN

Time-Resolved Exciton Luminescence In Gan Grown By Metalorganic Chemical-Vapor-Deposition

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Optical and Electrical Properties of GaN: Mg Grown by MOCVD

The morphology and optical characterizations of AlGaN/GaN based on Al 2O3 prepared by MOCVD

Time-resolved photoluminescence spectroscopy of GaN excitonic transitions