Cathode etching phenomenon of high beam-anode ion source and its elimination measures
Shi-Yi Tang,Zi-Qi Ma,Yun-Xiao Zou,Xiao-Kai An,Dong-Jie Yang,Liang-Liang Liu,Sui-Han Cui,Zhong-Zhen Wu,School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China,Department of Physics and Materials Science, City University of Hong Kong, Hong Kong 999077, China,College of Home and Art Design, Northeast Forestry University, Harbin 150006, China
DOI: https://doi.org/10.7498/aps.73.20240494
IF: 0.906
2024-09-23
Acta Physica Sinica
Abstract:Author(s): Tang Shi-Yi, Ma Zi-Qi, Zou Yun-Xiao, An Xiao-Kai, Yang Dong-Jie, Liu Liang-Liang, Cui Sui-Han, Wu Zhong-Zhen High beam-anode layer ion source can produce high-density ions, and has been widely used in plasma cleaning and assisted deposition. However, when increasing the ion-beams, arcing always occurs inside the ion source and serious etching will take place on the cathode, which results in sample pollution especially in long-time cleaning. In this work, two structures are designed, which are magnetic shielding around the anode and sputtering shielding on the top of the inner cathode and outer cathode, respectively. Based on the particle-in-cell/Monte Carlo collision method and test particle Monte Carlo method, the influence of designed structure on the electromagnetic field and the plasma properties of the ion source are studied through self-established simulation technique. The results show that the magnetic shielding around the anode cuts off the magnetic induction line between the cathode and anode, eliminating the arcing condition in the ion source. The sputtering shielding for the cathode uses alumina ceramic because of its extremely low sputtering yield and high insulation performance. Therefore, the sputtering shields can not only resist the ion sputtering, but also shield the electric field on the outer surface of the cathode. As a result, the plasma discharge region is compressed towards the anode and away from the cathode simultaneously, which provides a stronger electric field force directing to the output region for Ar<sup<+< 0.03%="" 0.6%="" 2="" 36%="" 9="" a="" about="" after="" agreement="" also="" an="" and="" ar<sup<+<="" arcing="" at="" beam="" behavior="" best="" but="" by="" calculation="" can="" cathode="" clean="" cleaned="" cleaning,="" coming="" composition="" content="" content,="" current,="" detected="" discharge="" distance="" efficiency="" efficiency.="" element="" eliminate="" etching="" experiments="" fe="" from="" glass="" good="" high="" higher="" improved="" in="" inside="" ion="" ions,="" is="" keeps="" magnitude="" mm.="" modified="" of="" one-hour="" only="" optimization.<="" optimized="" orders="" original="" output="" p="" plasma="" provide="" ratio="" remains="" result="" results="" reveal="" same="" shield="" shows="" simulation="" smaller="" source="" source,="" source.="" sputtering="" sputtering,="" strong="" substrate="" sup Acta Physica Sinica. 2024 73(18): 185202. Published 2024-09-20</sup<+<>
physics, multidisciplinary