The Hall Effect of Fe–Al–O Thin Film

QY Xu,G Ni,H Sang,YW Du
DOI: https://doi.org/10.1063/1.372910
IF: 2.877
2000-01-01
Journal of Applied Physics
Abstract:A series of Fe45.51(Al2O3)54.49 (volume fraction) nanogranular films were prepared using the ion-beam sputtering technique. A saturated Hall resistivity of about 12.5 μΩ cm was observed at room temperature. With different annealing temperature TA up to 300 °C, the saturated Hall resistivity of the sample decreases only a little, which shows good thermal stability. The transmission electron microscopy image shows that very small Fe particles (smaller than 1 nm) embedded in the Al2O3 matrix, and connected into the network, with the ρ–T curve indicates that this Hall effect may originate from the percolation phenomenon.
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