Investigation on Ag Concentration and Post-deposition Annealing of Gd3Ga5O12 Thin Film Electrolu-minescence

XU Zheng,XU Xiu-lai,CHEN Xiao-hong,ZHANG Ting,SHEN De-zhen
DOI: https://doi.org/10.3321/j.issn:1005-0086.2000.03.014
2000-01-01
Abstract:We have investigated the dependence on various Ag + concentration for photoluminescence (PL) and electroluminescence (EL ) of Gd 3Ga 5O 12 :Ag thin film,respectively.A rapid quenc hing of PL is observed above 0.2 at% of Ag concentration due to lattice defects and impurity atoms,however,the optimal concentration of Ag + in the EL efficiency is about 1 at%.The lattice absorption edge is red shift with increasing of Ag co ncentration.Pos t-deposition annealing greatly has reduced the lattice imperfections,improved t he PL and EL intensity.The best luminance of the EL devices annealed at 450 ℃ i s about 20 cd/m 2 when driven at 5 000 Hz.
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