Influence of Ag concentration and post-deposition annealing on Gd3Ga5O12/Ag thin film electroluminescence

Xiulai Xu,Zheng Xu,Yanbing Hou,Yongsheng Wang,Xurong Xu
DOI: https://doi.org/10.1016/S0141-9382(01)00056-7
IF: 3.074
2001-01-01
Displays
Abstract:We have investigated the dependence on various Ag concentration for photoluminescence (PL) and electroluminescence (EL) of Gd3Ga5O12/Ag thin film, respectively. A rapid quenching of PL is observed above 0.2at.% of Ag concentration due to lattice defects and impurity atoms. However, the optimal concentration of Ag in the EL efficiency is about 1at.%. This may be attributed to excited state electrons that are not easily trapped by annihilation centers in EL and a ‘narrower’ forbidden band. The lattice absorption edge is red shifted with increasing Ag concentration. Post-deposition annealing has greatly reduced the lattice imperfections, and improved the PL and EL intensity. The best luminance of the EL devices annealed at 450°C is about 20cd/m2 when driven at 5000Hz.
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