Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Low-Loss Millimeter-Wave Propagation Characteristics of Nrd-Guide Surface-Mounted on Planar Substrate for Hybrid Integrated Circuit

Propagation Characteristics of a Novel NRD Guide with Double-Layer LHM Slab

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Characterization of Planar Hybrid Dielectric-Loaded Plasmonic Nano-Waveguides Used for Nano-Photonic Circuits

Waveguides Used for Nano- Photonic Circuits

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

High performances of planar hybrid plasmonic waveguidebased structures

Characteristics and design consideration of leaky-wave NRD-guides for use as millimeter-wave antenna

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

A Novel Leaky Nrd Guide with A Double-Layer Dielectric Slab

High-performance CMOS-cornpatible Micromachined Edge-Suspended Coplanar Waveguides on Low Resistivity Silicon Substrate

Analysis of Characteristics for Novel NRD-Guide Leaky Wave Antenna

Coupling of Channelized Nonradiative Dielectric Guide

Ultra-Low-Loss and Broadband All-Silicon Dielectric Waveguides for WR-1 Band (0.75–1.1 THz) Modules

Millimeter Propagation and High Confinement in Rhombus-Based Hybrid Plasmonic Waveguides

A New Asymmetrically Grooved Nrd Guide Leaky-Wave Antenna For Millimeter-Wave Application

Hybrid Dielectric-loaded Nanoridge Plasmonic Waveguide for Low-Loss Light Transmission at the Subwavelength Scale

Characterization and Attenuation Mechanism of CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides on Low-Resistivity Silicon Substrate

The Design and Research of a New Hybrid Surface Plasmonic Waveguide Nanolaser