Preparation of Gd2CuO4 film with perovskite structure

Yingxia Zhang,Yongfa Zhu, Shao-Ke,Wenqing Yao,Xiaoyan Ye,LiLi Cao
DOI: https://doi.org/10.3321/j.issn:0567-7351.2000.06.007
2000-01-01
Acta Chimica Sinica
Abstract:Gd2CuO4 film was successfully deposited on Si wafer using an amorphous heteronuclear complex as precursor. XPS indicated the film was composed of Gd2CuO4 complicated oxide, and while XRD showed that the film had perovskite structure. AES depth profile revealed the film was homogenous with depth. The thickness of film increased with the concentration of precursor polynomially and the relationship could be described as follows: d = 2.96 - 0.446(ω/% ) + 0.141(ω/%)2. The mass fraction of precursor in solution had singnificant influence on the texture of film. When the mass fraction of precursor in solution was lower than 22%, no micro-crackle was observed. The addition of PEG had practically no effects on the thickness of film, but it could improve the texture of the film.
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