Abstract:A new type of two-dimensional layered semiconductor with weak electrostatic but not van der Waals interlayer interactions, Bi2O2Se, has been recently synthesized, which shown excellent air stability and ultrahigh carrier mobility. Herein, we combined theoretical and experimental approaches to study the Raman spectra of Bi2O2Se and related bismuth oxychalcogenides (Bi2O2Te and Bi2O2S). The experimental peaks were fully consistent with the calculated results, and were successfully assigned. Bi2O2S was predicted to have more Raman-active modes due to its lower symmetry. The shift of the predicted frequencies of Raman active modes was also found to get softened as the interlayer interaction decreases from bulk to monolayer Bi2O2Se and Bi2O2Te. To reveal the strain effects on the Raman shifts, a universal theoretical equation was established based on the symmetry of Bi2O2Se and Bi2O2Te. It was predicted that the doubly degenerate modes split under in-plane uniaxial/shear strains. Under a rotated uniaxial strain, the changes of Raman shifts are anisotropic for degenerate modes although Bi2O2Se and Bi2O2Te were usually regarded as isotropic systems similar to graphene. This implies a novel method to identify the crystallographic orientation from Raman spectra under strain. These results have important consequences for the incorporation of 2D Bismuth oxychalcogenides into nanoelectronic devices.

[Infrared Spectra and Raman Spectra of Monoclinic RblnS2 and CsInS2].

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Preparation, Structures, and Band Gaps of RbInS2 and RbInSe2

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Infrared and Raman Spectra of Bi2O2X and Bi2OX2 (X = S, Se, and Te) Studied from First Principles Calculations

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

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X-Ray Photoelectron And Raman Spectroscopy Of Nanocrystalline Ga0.62in0.38sb-Sio2 Composite Films

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Micro-structural studies of GeSe2-Ga2Se3-MX (MX = CsI and PbI2) glasses using Raman spectra

Raman Scattering Studies of the Ge–In Sulfide Glasses

Raman Scattering Study on InSb Nano-crystals Film

Microstructure and thermal properties of the GeS 2 -In 2 S 3 -CsI glasses

Raman Spectroscopy of Bi2Se3-xTex (x= 0 to 3) Topological Insulator Crystals

Raman Scattering Studies of the GeS2–Ga2S3–CsCl Glassy System

Raman and infrared spectroscopic study of the defect spinel In 21.333S32

Electronic and Optical Properties of Orthorhombic LiInS2 and LiInSe2: A Density Functional Theory Investigation

Dilute antimonide nitride for long wavelength infrared photodetection

ChemInform Abstract: Insights into Photoluminescence Property and Photocatalytic Activity of Cubic and Rhombohedral ZnIn2S4.

Micro-structural study of the GeS2-In2S3-KCl glassy system by Raman scattering.