Preparation, Structures, and Band Gaps of RbInS2 and RbInSe2

FQ Huang,B Deng,DE Ellis,JA Ibers
DOI: https://doi.org/10.1016/j.jssc.2005.04.007
IF: 3.3
2005-01-01
Journal of Solid State Chemistry
Abstract:The two compounds RbInS2 and RbInSe2 have been synthesized at 773K by means of the reactive flux method. These isostructural compounds crystallize in space group C2/c of the monoclinic system with 16 formula units in a cell at 153K of dimensions a=11.0653(7)Å, b=11.0643(7)Å, c=15.5796(9)Å, and β=100.244(1)° for RbInS2, and a=11.477(3)Å, b=11.471(3)Å, c=16.186(6)Å, and β=100.16(2)° for RbInSe2. The In atoms are four-coordinated. The structure consists of two-dimensional ∞2[InQ2-] (Q=S, Se) layers perpendicular to [001] separated from the Rb+ cations. Adamantane-like In4Q10 units are connected by common corners to form the layers. Band structure calculations indicate that these compounds are direct band-gap semiconductors with the smallest band gap at the Γ point. The calculated band gaps are 2.8eV for RbInS2 and 2.0eV for RbInSe2, values that are consistent with the colors of the compounds.
What problem does this paper attempt to address?