Abstract:Since binary rare earth chalcogenides exhibit diverse and interesting physical properties, they have been vigorously studied about their composition and crystal structure. For example, the rare earth sulfides ?-R2S3 (R = Tb, Dy) with tetragonal crystal structure exhibit peculiar successive antiferromagnetic transitions. The rare earth tellurides RTe3 (R = Gd, Tb, Dy) with layered structure exhibit charge density wave (CDW) transition and superconducting transition under pressure. In the writer research on a series of rare earth chalcogenides, the magnetocaloric effect (MCE) of ?-R2S3 (R = Tb, Dy) and the physical properties of GdTe3 in high magnetic field and low temperature region were investigated in advance. In addition to such attractive physical properties of rare earth compounds, many characteristic physical properties have also been reported for rare earth compounds including transition metals. In these transition-metal rare earth compounds, there still exist no-studied areas and it is a possible that unknown substances may be hidden, which exhibit novel physical properties leading to materials useful for the next generation society. So in this study, we aimed to search for new rare earth chalcogenides including transition metal. As a result, I discovered new transition-metal rare earth chalcogenides R10NiTe9 (R = Gd, Tb) and investigated their magnetic and electrical properties in detail. Single crystals of R10NiTe9 were grown by heat treatment of a mixture of R, R3Ni and R2Te3. SEM-EDX analysis confirmed that the ratio of R, Ni and Te was about 10: 1: 9. XRD analysis revealed that the obtained single crystal was NaCl-type structure with space group Fm-3m at room temperature. It was concluded that in this structure Ni was randomly substituted Te in a ratio of 1 per 10. In terms of magnetism, the following points have been clarified. (A) In the case of Gd10NiTe9, (1) it exhibits a ferromagnetic transition at 168 K. It implies that I succeeded in emerging ferromagnetism at high temperature by slightly incorporating Ni into GdTe having an antiferromagnetism at a lower temperature. (2) In the magnetization process at low temperature, it has been found that there is a region where the magnetization decreases with increasing the magnetic field. It was also concluded to be cooperative phenomenon between the rare earth element Gd and the transition metal element Ni. (B) For Tb10NiTe9, (1) Two peaks suggesting successive magnetic transitions were found below 120 K in the temperature dependence of magnetization. (2) A remarkable FC / ZFC effect was found below a temperature at which the high temperature side magnetic transition occurs. As for electrical conductivity, the followings were clarified. In both compounds Gd10NiTe9 and Tb10NiTe9, (1) electrical resistivity is about 104 times greater than conventional metal at room temperature. (2) Temperature dependence of electrical resistivity is extremely weak, and the value of electric resistivity hardly changes down to about 50 K. (3) Temperature dependence of electrical resistivity shows a sharp rise below about 50 K. As mentioned above, single crystals of Gd10NiTe9 and Tb10NiTe9 were successfully grown, as new rare earth chalcogenides including Ni, and exhibited novel physical properties on magnetism and electrical conductivity. This result seems to open up a new way to study deepened physical properties of the present compounds, research on physical properties in new compound group R10NiTe9 and develop new materials.

Syntheses, Structures, and Physical Properties of the New Quaternary Rare-Earth Chalcogenides RbNd2CuS4, RbSm2CuS4, CsLa2CuSe4, CsSm2CuSe4, RbEr2Cu3S5, CsGd2Ag3Se5, CsTb2Ag3Se5, and Rb2Gd4Cu4S9

Syntheses, Structures, and Physical Properties of the New Quaternary Rare-Earth Chalcogenides RbNd

Syntheses and Structures of the New Quaternary Rubidium Selenides RbLn2CuSe4 (ln=sm, Gd, Dy), Rb1.5Ln2Cu2.5Se5 (ln=gd, Dy), and RbSm2Ag3Se5

Study on Single Crystal Growth and Physical Properties of New Rare-Earth Chalcogenides Including Ni

New Layered Materials: Syntheses, Structures, and Optical and Magnetic Properties of CsGdZnSe3, CsZrCuSe3, CsUCuSe3, and BaGdCuSe3.

Syntheses and Structures of the Quaternary Copper Tellurides K3Ln4Cu5Te10 (ln=sm, Gd, Er), Rb3Ln4Cu5Te10 (ln=nd, Gd), and Cs3Gd4Cu5Te10

Syntheses, Structure, and Selected Physical Properties of CsLnMnSe3 (ln: Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Y) and AYbZnQ3 (A: Rb, Cs; Q: S, Se, Te).

Cs2Ln3CuS8 (Ln = La-Nd, Sm-Tb): Synthesis, Crystal Structure, and Magnetic and Optical Properties

Syntheses, Structure, and Magnetic Properties of Several Lnybq(3) Chalcogenides, Q = S, Se

Syntheses, Structures, and Physical Properties of CsRE2Ag3Te5 (RE = Pr, Nd, Sm, Gd–Er) and RbRE2Ag3Te5 (RE = Sm, Gd–Dy)

Synthesis, Crystal Structure and Properties of the New Laminar Quaternary Tellurides SrLnCuTe3 (Ln = Sm, Gd–Tm and Lu)

Structural, electronic, magnetic and optical properties of GdCuX2 (X = S, Se and Te) compounds

Rbcu1.2ag3.8se3 And Cscu2sb2se5: Novel Quaternary Intermetallics Synthesized From Superheated Organic Medial

X-ray-absorption Studies of Electron Doping and Band Shifts Inr2−x…

Syntheses, Structures, Physical Properties, and Theoretical Study of Lacu0.40te2, Ndcu0.37te2, Smcu0.34te2, Gdcu0.33te2, and Dycu0.32te2

A Challenge toward Novel Quaternary Sulfides SrLnCuS3 (Ln = La, Nd, Tm): Unraveling Synthetic Pathways, Structures and Properties

Crystal Growth and Physical Properties of SrCu2As2, SrCu2Sb2 and BaCu2Sb2

The Two-Dimensional AxCdxBi4-xQ6 (A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials

Synthesis, characterisation and properties of rare earth oxyselenides A4O4Se3 (A = Eu, Gd, Tb, Dy, Ho, Er, Yb and Y).

Layered NaBa2M3Q3(Q2) (M = Cu or Ag; Q = S or Se) Chalcogenides and Local Ordering in Their Mixed-Anion Compositions

Synthesis, Crystal Structure and Physical Properties of a New Chalcogenides Rb3Ga3Ge7S20